Electroluminescence from Eu3+ doped Sr2CeO4 nanocrystalline thin films

N. Perea-Lopez; J. A. Gonzalez-Ortega; G. A. Hirata

doi:10.1016/j.optmat.2006.03.006

Electroluminescence from Eu³⁺ doped Sr₂CeO₄ nanocrystalline thin films

N. Perea-Lopez, J. A. Gonzalez-Ortega, G. A. Hirata

Physics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Red light emission produced by electroluminescence has been obtained from Sr₂CeO₄:Eu nanocrystalline thin films. The emission was achieved by fabricating a thin film electroluminescent device (TFEL) that consisted of a multiple layer heterostructure formed by a top transparent electrode, emitting layer, dielectric sheet and metallic back electrode. In this TFEL device, the Sr₂CeO₄:Eu emitting film was grown on polished BaTiO₃ dielectric substrates by pulsed laser deposition (PLD) with the ablation target made of 10 mol% Eu doped Sr₂CeO₄ luminescent powders. PLD was also used to deposit the transparent electrode using a commercial ITO ablation target. The back electrode was screen-printed using silver epoxy paste. The system showed characteristic line emissions of Eu³⁺ intrashell transitions being the ⁵D₀ →⁷F₂ the stronger (at 610 nm). CIE chromaticity coordinates are x = 0.639 and y = 0.360. Electro-optical measurements showed a threshold voltage at 150 V with the maximum efficiency of ∼16 × 10^-3 lm/W at 300 V.

Original language	English (US)
Pages (from-to)	43-46
Number of pages	4
Journal	Optical Materials
Volume	29
Issue number	1
DOIs	https://doi.org/10.1016/j.optmat.2006.03.006
State	Published - Oct 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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10.1016/j.optmat.2006.03.006

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title = "Electroluminescence from Eu3+ doped Sr2CeO4 nanocrystalline thin films",

abstract = "Red light emission produced by electroluminescence has been obtained from Sr2CeO4:Eu nanocrystalline thin films. The emission was achieved by fabricating a thin film electroluminescent device (TFEL) that consisted of a multiple layer heterostructure formed by a top transparent electrode, emitting layer, dielectric sheet and metallic back electrode. In this TFEL device, the Sr2CeO4:Eu emitting film was grown on polished BaTiO3 dielectric substrates by pulsed laser deposition (PLD) with the ablation target made of 10 mol% Eu doped Sr2CeO4 luminescent powders. PLD was also used to deposit the transparent electrode using a commercial ITO ablation target. The back electrode was screen-printed using silver epoxy paste. The system showed characteristic line emissions of Eu3+ intrashell transitions being the 5D0 → 7F2 the stronger (at 610 nm). CIE chromaticity coordinates are x = 0.639 and y = 0.360. Electro-optical measurements showed a threshold voltage at 150 V with the maximum efficiency of ∼16 × 10-3 lm/W at 300 V.",

author = "N. Perea-Lopez and Gonzalez-Ortega, {J. A.} and Hirata, {G. A.}",

note = "Funding Information: This study was supported by CONACyT (Grant 40128-F) and DGAPA-UNAM. The authors acknowledge the technical work performed by E. Aparicio, M. Sainz, F. Ruiz, A. Tiznado, E. Medina, J.A. Peralta, J. Palomares, I. Gradilla, V. Garcia, G. Vilchis, E. Flores and P. Casillas.",

year = "2006",

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AU - Perea-Lopez, N.

AU - Gonzalez-Ortega, J. A.

AU - Hirata, G. A.

N1 - Funding Information: This study was supported by CONACyT (Grant 40128-F) and DGAPA-UNAM. The authors acknowledge the technical work performed by E. Aparicio, M. Sainz, F. Ruiz, A. Tiznado, E. Medina, J.A. Peralta, J. Palomares, I. Gradilla, V. Garcia, G. Vilchis, E. Flores and P. Casillas.

PY - 2006/10

Y1 - 2006/10

N2 - Red light emission produced by electroluminescence has been obtained from Sr2CeO4:Eu nanocrystalline thin films. The emission was achieved by fabricating a thin film electroluminescent device (TFEL) that consisted of a multiple layer heterostructure formed by a top transparent electrode, emitting layer, dielectric sheet and metallic back electrode. In this TFEL device, the Sr2CeO4:Eu emitting film was grown on polished BaTiO3 dielectric substrates by pulsed laser deposition (PLD) with the ablation target made of 10 mol% Eu doped Sr2CeO4 luminescent powders. PLD was also used to deposit the transparent electrode using a commercial ITO ablation target. The back electrode was screen-printed using silver epoxy paste. The system showed characteristic line emissions of Eu3+ intrashell transitions being the 5D0 → 7F2 the stronger (at 610 nm). CIE chromaticity coordinates are x = 0.639 and y = 0.360. Electro-optical measurements showed a threshold voltage at 150 V with the maximum efficiency of ∼16 × 10-3 lm/W at 300 V.

AB - Red light emission produced by electroluminescence has been obtained from Sr2CeO4:Eu nanocrystalline thin films. The emission was achieved by fabricating a thin film electroluminescent device (TFEL) that consisted of a multiple layer heterostructure formed by a top transparent electrode, emitting layer, dielectric sheet and metallic back electrode. In this TFEL device, the Sr2CeO4:Eu emitting film was grown on polished BaTiO3 dielectric substrates by pulsed laser deposition (PLD) with the ablation target made of 10 mol% Eu doped Sr2CeO4 luminescent powders. PLD was also used to deposit the transparent electrode using a commercial ITO ablation target. The back electrode was screen-printed using silver epoxy paste. The system showed characteristic line emissions of Eu3+ intrashell transitions being the 5D0 → 7F2 the stronger (at 610 nm). CIE chromaticity coordinates are x = 0.639 and y = 0.360. Electro-optical measurements showed a threshold voltage at 150 V with the maximum efficiency of ∼16 × 10-3 lm/W at 300 V.

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Electroluminescence from Eu³⁺ doped Sr₂CeO₄ nanocrystalline thin films

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