Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

Junseok Heo; Ting Zhu; Chunfeng Zhang; Jian Xu; Pallab Bhattacharya

doi:10.1364/OL.35.000547

Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

Junseok Heo, Ting Zhu, Chunfeng Zhang, Jian Xu, Pallab Bhattacharya

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at λ= 1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of -420

Original language	English (US)
Pages (from-to)	547-549
Number of pages	3
Journal	Optics Letters
Volume	35
Issue number	4
DOIs	https://doi.org/10.1364/OL.35.000547
State	Published - Feb 15 2010

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OL.35.000547

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title = "Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots",

abstract = "The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at λ= 1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of -420",

author = "Junseok Heo and Ting Zhu and Chunfeng Zhang and Jian Xu and Pallab Bhattacharya",

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T1 - Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

AU - Heo, Junseok

AU - Zhu, Ting

AU - Zhang, Chunfeng

AU - Xu, Jian

AU - Bhattacharya, Pallab

PY - 2010/2/15

Y1 - 2010/2/15

N2 - The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at λ= 1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of -420

AB - The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at λ= 1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of -420

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M3 - Article

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EP - 549

JO - Optics Letters

JF - Optics Letters

IS - 4

ER -

Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

Abstract

All Science Journal Classification (ASJC) codes

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