TY - JOUR
T1 - Electromagnetic modeling of through-silicon via (TSV) interconnections using cylindrical modal basis functions
AU - Han, Ki Jin
AU - Swaminathan, Madhavan
AU - Bandyopadhyay, Tapobrata
PY - 2010/11
Y1 - 2010/11
N2 - This paper proposes an efficient method to model through-silicon via (TSV) interconnections, an essential building block for the realization of silicon-based 3-D systems. The proposed method results in equivalent network parameters that include the combined effect of conductor, insulator, and silicon substrate. Although the modeling method is based on solving Maxwell's equation in integral form, the method uses a small number of global modal basis functions and can be much faster than discretization-based integral-equation methods. Through comparison with 3-D full-wave simulations, this paper validates the accuracy and the efficiency of the proposed modeling method.
AB - This paper proposes an efficient method to model through-silicon via (TSV) interconnections, an essential building block for the realization of silicon-based 3-D systems. The proposed method results in equivalent network parameters that include the combined effect of conductor, insulator, and silicon substrate. Although the modeling method is based on solving Maxwell's equation in integral form, the method uses a small number of global modal basis functions and can be much faster than discretization-based integral-equation methods. Through comparison with 3-D full-wave simulations, this paper validates the accuracy and the efficiency of the proposed modeling method.
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U2 - 10.1109/TADVP.2010.2050769
DO - 10.1109/TADVP.2010.2050769
M3 - Article
AN - SCOPUS:78651326478
SN - 1521-3323
VL - 33
SP - 804
EP - 817
JO - IEEE Transactions on Advanced Packaging
JF - IEEE Transactions on Advanced Packaging
IS - 4
M1 - 5492298
ER -