TY - JOUR
T1 - Electromechanics of Domain Walls in Uniaxial Ferroelectrics
AU - Lu, Haidong
AU - Tan, Yueze
AU - Richarz, Leonie
AU - He, Jiali
AU - Wang, Bo
AU - Meier, Dennis
AU - Chen, Long Qing
AU - Gruverman, Alexei
N1 - Publisher Copyright:
© 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.
PY - 2023/4/11
Y1 - 2023/4/11
N2 - Piezoresponse force microscopy (PFM) is used for investigation of the electromechanical behavior of the head-to-head (H-H) and tail-to-tail (T-T) domain walls on the non-polar surfaces of three uniaxial ferroelectric materials with different crystal structures: LiNbO3, Pb5Ge3O11, and ErMnO3. It is shown that, contrary to the common expectation that the domain walls should not exhibit any PFM response on the non-polar surface, an out-of-plane deformation of the crystal at the H-H and T-T domain walls occurs even in the absence of the out-of-plane polarization component due to a specific form of the piezoelectric tensor. In spite of their different symmetry, in all studied materials, the dominant contribution comes from the counteracting shear strains on both sides of the H-H and T-T domain walls. The finite element analysis approach that takes into account a contribution of all elements in the piezoelectric tensor, is applicable to any ferroelectric material and can be instrumental for getting a new insight into the coupling between the electromechanical and electronic properties of the charged ferroelectric domain walls.
AB - Piezoresponse force microscopy (PFM) is used for investigation of the electromechanical behavior of the head-to-head (H-H) and tail-to-tail (T-T) domain walls on the non-polar surfaces of three uniaxial ferroelectric materials with different crystal structures: LiNbO3, Pb5Ge3O11, and ErMnO3. It is shown that, contrary to the common expectation that the domain walls should not exhibit any PFM response on the non-polar surface, an out-of-plane deformation of the crystal at the H-H and T-T domain walls occurs even in the absence of the out-of-plane polarization component due to a specific form of the piezoelectric tensor. In spite of their different symmetry, in all studied materials, the dominant contribution comes from the counteracting shear strains on both sides of the H-H and T-T domain walls. The finite element analysis approach that takes into account a contribution of all elements in the piezoelectric tensor, is applicable to any ferroelectric material and can be instrumental for getting a new insight into the coupling between the electromechanical and electronic properties of the charged ferroelectric domain walls.
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U2 - 10.1002/adfm.202213684
DO - 10.1002/adfm.202213684
M3 - Article
AN - SCOPUS:85147225894
SN - 1616-301X
VL - 33
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 15
M1 - 2213684
ER -