Abstract
Electron field-emission tests have been performed on films grown by a modified microwave plasma assisted chemical vapor deposition diamond process. This modification includes the addition of N2 and O2 during the growth stage. Characterization of these films shows the presence of a disordered tetrahedral carbon structure. Raman spectroscopy indicates a disturbance in the cubic symmetry of the lattice and x-ray diffraction indicates a disordered tetrahedral structure. Field-emission testing indicate that current densities of 0.5 mA/cm2 can be obtained for applied fields of 5-8 V/μm. The results are explained in terms of a change in the band structure and the formation of electronic states in the band gap.
Original language | English (US) |
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Pages (from-to) | 794-796 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 6 |
DOIs | |
State | Published - Aug 11 1997 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)