Electron emission from disordered tetrahedral carbon

Brock Landon Weiss; A. Badzian; L. Pilione; T. Badzian; W. Drawl

Electron emission from disordered tetrahedral carbon

Brock Landon Weiss, A. Badzian, L. Pilione, T. Badzian, W. Drawl

Division of Mathematics & Natural Sciences (Altoona)

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Electron field emission tests have been performed on films grown by a modified microwave plasma assisted chemical vapor deposition diamond process. This modification includes the addition of N₂ and O₂ during the growth stage. Characterization of these films shows the presence of a disordered tetrahedral carbon structure. Raman spectroscopy indicates a disturbance in the cubic symmetry of the lattice and X-ray diffraction indicates a disordered tetrahedral structure. Field emission testing indicate that current densities of 0.5 mA/cm² can be obtained for applied fields of 5-8 V/μm. The results are explained in terms of a change in the band structure and the formation of electronic states in the band gap.

Original language	English (US)
Pages	103-106
Number of pages	4
State	Published - Dec 1 1997
Event	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: Aug 17 1997 → Aug 21 1997

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Other	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
City	Kyongju, Korea
Period	8/17/97 → 8/21/97

All Science Journal Classification (ASJC) codes

Surfaces and Interfaces

Cite this

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title = "Electron emission from disordered tetrahedral carbon",

abstract = "Electron field emission tests have been performed on films grown by a modified microwave plasma assisted chemical vapor deposition diamond process. This modification includes the addition of N2 and O2 during the growth stage. Characterization of these films shows the presence of a disordered tetrahedral carbon structure. Raman spectroscopy indicates a disturbance in the cubic symmetry of the lattice and X-ray diffraction indicates a disordered tetrahedral structure. Field emission testing indicate that current densities of 0.5 mA/cm2 can be obtained for applied fields of 5-8 V/μm. The results are explained in terms of a change in the band structure and the formation of electronic states in the band gap.",

author = "Weiss, {Brock Landon} and A. Badzian and L. Pilione and T. Badzian and W. Drawl",

year = "1997",

month = dec,

day = "1",

language = "English (US)",

pages = "103--106",

note = "Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 ; Conference date: 17-08-1997 Through 21-08-1997",

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TY - CONF

T1 - Electron emission from disordered tetrahedral carbon

AU - Weiss, Brock Landon

AU - Badzian, A.

AU - Pilione, L.

AU - Badzian, T.

AU - Drawl, W.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Electron field emission tests have been performed on films grown by a modified microwave plasma assisted chemical vapor deposition diamond process. This modification includes the addition of N2 and O2 during the growth stage. Characterization of these films shows the presence of a disordered tetrahedral carbon structure. Raman spectroscopy indicates a disturbance in the cubic symmetry of the lattice and X-ray diffraction indicates a disordered tetrahedral structure. Field emission testing indicate that current densities of 0.5 mA/cm2 can be obtained for applied fields of 5-8 V/μm. The results are explained in terms of a change in the band structure and the formation of electronic states in the band gap.

AB - Electron field emission tests have been performed on films grown by a modified microwave plasma assisted chemical vapor deposition diamond process. This modification includes the addition of N2 and O2 during the growth stage. Characterization of these films shows the presence of a disordered tetrahedral carbon structure. Raman spectroscopy indicates a disturbance in the cubic symmetry of the lattice and X-ray diffraction indicates a disordered tetrahedral structure. Field emission testing indicate that current densities of 0.5 mA/cm2 can be obtained for applied fields of 5-8 V/μm. The results are explained in terms of a change in the band structure and the formation of electronic states in the band gap.

UR - http://www.scopus.com/inward/record.url?scp=0031338496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031338496&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031338496

SP - 103

EP - 106

T2 - Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97

Y2 - 17 August 1997 through 21 August 1997

ER -

Electron emission from disordered tetrahedral carbon

Abstract

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