Abstract
Electron field emission measurements have been performed on thin film cold cathode materials grown, on molybdenum, by a modified MPACVD diamond process. Specifically the modification is due to the addition of nitrogen and oxygen, in varying ratios, during the diamond growth phase. Characterization using Raman spectroscopy shows features at 1190, 1330 and 1550 cm-1. A simple triode device was fabricated for electron emission characterization. KAPTON film is used as the insulating layer and a Mo mesh is used as the extraction gate electrode. The collector is an indium tin oxide (ITO) coated glass plate which is positively biased with respect to the gate electrode. Field emission characteristics have shown current measurements of greater than 1 microamp for fields of 40 V/micron. Gate currents are typically 1000 times greater than the emitted current. Issues currently being addressed include improvement in the total emitted current, current stability and device failure. We also present field emission measurements on diamond films grown by HFCVD.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 227-231 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 593 |
| State | Published - 2000 |
| Event | Symposium-Amorphous and Nanoestructured Carbon - Boston, MA, USA Duration: Nov 29 1999 → Dec 2 1999 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering