Electron field emission from diamond grown by laser QQC process

A. Badzian; B. L. Weiss; R. Roy; T. Badzian; W. Drawl; P. Mistry; M. C. Turchan

Electron field emission from diamond grown by laser QQC process

A. Badzian, B. L. Weiss, R. Roy, T. Badzian, W. Drawl, P. Mistry, M. C. Turchan

Division of Mathematics & Natural Sciences (Altoona)

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

A new diamond deposition process utilizing a plasma and a variety of interactions from a multiple laser system has been demonstrated, with WC/Co substrates. The process is conducted in open air and does not involve hydrogen. Structural characterization of the diamond coatings, which have exceptional adhesion to cutting tool inserts, indicates a cubic diamond structure. Tungsten and cobalt atoms are incorporated into the film and a layer depleted in cobalt exists at the diamond-WC/Co interface. Electron field emission current densities reached 6mA/cm² at an applied voltage of 3000 V for a film-anode distance 20 μm.

Original language	English (US)
Pages	546-550
Number of pages	5
State	Published - 1997
Event	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: Aug 17 1997 → Aug 21 1997

Other

Other	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
City	Kyongju, Korea
Period	8/17/97 → 8/21/97

All Science Journal Classification (ASJC) codes

Surfaces and Interfaces

Cite this

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title = "Electron field emission from diamond grown by laser QQC process",

abstract = "A new diamond deposition process utilizing a plasma and a variety of interactions from a multiple laser system has been demonstrated, with WC/Co substrates. The process is conducted in open air and does not involve hydrogen. Structural characterization of the diamond coatings, which have exceptional adhesion to cutting tool inserts, indicates a cubic diamond structure. Tungsten and cobalt atoms are incorporated into the film and a layer depleted in cobalt exists at the diamond-WC/Co interface. Electron field emission current densities reached 6mA/cm2 at an applied voltage of 3000 V for a film-anode distance 20 μm.",

author = "A. Badzian and Weiss, {B. L.} and R. Roy and T. Badzian and W. Drawl and P. Mistry and Turchan, {M. C.}",

year = "1997",

language = "English (US)",

pages = "546--550",

note = "Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 ; Conference date: 17-08-1997 Through 21-08-1997",

}

TY - CONF

T1 - Electron field emission from diamond grown by laser QQC process

AU - Badzian, A.

AU - Weiss, B. L.

AU - Roy, R.

AU - Badzian, T.

AU - Drawl, W.

AU - Mistry, P.

AU - Turchan, M. C.

PY - 1997

Y1 - 1997

N2 - A new diamond deposition process utilizing a plasma and a variety of interactions from a multiple laser system has been demonstrated, with WC/Co substrates. The process is conducted in open air and does not involve hydrogen. Structural characterization of the diamond coatings, which have exceptional adhesion to cutting tool inserts, indicates a cubic diamond structure. Tungsten and cobalt atoms are incorporated into the film and a layer depleted in cobalt exists at the diamond-WC/Co interface. Electron field emission current densities reached 6mA/cm2 at an applied voltage of 3000 V for a film-anode distance 20 μm.

AB - A new diamond deposition process utilizing a plasma and a variety of interactions from a multiple laser system has been demonstrated, with WC/Co substrates. The process is conducted in open air and does not involve hydrogen. Structural characterization of the diamond coatings, which have exceptional adhesion to cutting tool inserts, indicates a cubic diamond structure. Tungsten and cobalt atoms are incorporated into the film and a layer depleted in cobalt exists at the diamond-WC/Co interface. Electron field emission current densities reached 6mA/cm2 at an applied voltage of 3000 V for a film-anode distance 20 μm.

UR - http://www.scopus.com/inward/record.url?scp=0031339747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031339747&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031339747

SP - 546

EP - 550

T2 - Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97

Y2 - 17 August 1997 through 21 August 1997

ER -

Electron field emission from diamond grown by laser QQC process

Abstract

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All Science Journal Classification (ASJC) codes

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