Electron microscopy of GaAs/MnAs core/shell nanowires

N. S. Dellas; J. Liang; B. J. Cooley; N. Samarth; S. E. Mohney

doi:10.1063/1.3481066

Electron microscopy of GaAs/MnAs core/shell nanowires

N. S. Dellas, J. Liang, B. J. Cooley, N. Samarth, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

GaAs/MnAs core/shell nanowire heterostructures were synthesized by catalyst-free molecular beam epitaxy. Transmission electron microscopy (TEM) reveals that the GaAs core predominantly grows with the zinc-blende crystal structure with a [111] growth direction. In a small population of wires, the crystal structure transitions from zinc blende to wurtzite with a [001] growth direction. Cross-sectional TEM shows that the MnAs grows epitaxially on the GaAs core in the NiAs prototype structure with an epitaxial relation of [̄2021] MnAs∥[111] GaAs and (̄0110) MnAs∥GaAs (̄110). When the GaAs core is in the wurtzite structure, the epitaxial relation between the GaAs and MnAs changes to [0001] MnAs∥[0001] GaAs and (̄1210) MnAs (̄1210) GaAs.

Original language	English (US)
Article number	072505
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3481066
State	Published - Aug 16 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3481066

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title = "Electron microscopy of GaAs/MnAs core/shell nanowires",

abstract = "GaAs/MnAs core/shell nanowire heterostructures were synthesized by catalyst-free molecular beam epitaxy. Transmission electron microscopy (TEM) reveals that the GaAs core predominantly grows with the zinc-blende crystal structure with a [111] growth direction. In a small population of wires, the crystal structure transitions from zinc blende to wurtzite with a [001] growth direction. Cross-sectional TEM shows that the MnAs grows epitaxially on the GaAs core in the NiAs prototype structure with an epitaxial relation of {\=[}2021] MnAs∥[111] GaAs and {\=(}0110) MnAs∥GaAs {\=(}110). When the GaAs core is in the wurtzite structure, the epitaxial relation between the GaAs and MnAs changes to [0001] MnAs∥[0001] GaAs and {\=(}1210) MnAs {\=(}1210) GaAs.",

author = "Dellas, {N. S.} and J. Liang and Cooley, {B. J.} and N. Samarth and Mohney, {S. E.}",

note = "Funding Information: This work is supported by the Penn State Center for Nanoscale Science (NSF DMR-0820404), NSF ECCS-0609282, ONR N00014-09-1-0221, and used the Penn State Nanofabrication Facility (NSF NNUN ECCS-0335765). Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

year = "2010",

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doi = "10.1063/1.3481066",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

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T1 - Electron microscopy of GaAs/MnAs core/shell nanowires

AU - Dellas, N. S.

AU - Liang, J.

AU - Cooley, B. J.

AU - Samarth, N.

AU - Mohney, S. E.

N1 - Funding Information: This work is supported by the Penn State Center for Nanoscale Science (NSF DMR-0820404), NSF ECCS-0609282, ONR N00014-09-1-0221, and used the Penn State Nanofabrication Facility (NSF NNUN ECCS-0335765). Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010/8/16

Y1 - 2010/8/16

N2 - GaAs/MnAs core/shell nanowire heterostructures were synthesized by catalyst-free molecular beam epitaxy. Transmission electron microscopy (TEM) reveals that the GaAs core predominantly grows with the zinc-blende crystal structure with a [111] growth direction. In a small population of wires, the crystal structure transitions from zinc blende to wurtzite with a [001] growth direction. Cross-sectional TEM shows that the MnAs grows epitaxially on the GaAs core in the NiAs prototype structure with an epitaxial relation of [̄2021] MnAs∥[111] GaAs and (̄0110) MnAs∥GaAs (̄110). When the GaAs core is in the wurtzite structure, the epitaxial relation between the GaAs and MnAs changes to [0001] MnAs∥[0001] GaAs and (̄1210) MnAs (̄1210) GaAs.

AB - GaAs/MnAs core/shell nanowire heterostructures were synthesized by catalyst-free molecular beam epitaxy. Transmission electron microscopy (TEM) reveals that the GaAs core predominantly grows with the zinc-blende crystal structure with a [111] growth direction. In a small population of wires, the crystal structure transitions from zinc blende to wurtzite with a [001] growth direction. Cross-sectional TEM shows that the MnAs grows epitaxially on the GaAs core in the NiAs prototype structure with an epitaxial relation of [̄2021] MnAs∥[111] GaAs and (̄0110) MnAs∥GaAs (̄110). When the GaAs core is in the wurtzite structure, the epitaxial relation between the GaAs and MnAs changes to [0001] MnAs∥[0001] GaAs and (̄1210) MnAs (̄1210) GaAs.

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Electron microscopy of GaAs/MnAs core/shell nanowires

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