TY - GEN
T1 - Electron paramagnetic resonance studies of interlayer dielectrics
AU - Bittel, B. C.
AU - Pomorski, T. A.
AU - Lenahan, P. M.
AU - King, S.
AU - Mays, E.
PY - 2011
Y1 - 2011
N2 - Interlayer dielectrics with low dielectric constants are needed for current and future ULSI technology nodes. [1,2] However an understanding of the defects which limit reliability and cause increased leakage currents is not yet developed for these low-k films. As reported previously [3], we have observed several performance limiting defects with electron paramagnetic resonance (EPR) that correlate quite strongly to leakage current measurements. We have recently made significant progress in developing a fundamental understanding of how film composition and processing parameters affect specific defects and how these defects are related to leakage currents. In this new work we utilize EPR and leakage current measurements to investigate over fifty low-k dielectrics with potential use as ILDs and ESLs. Films investigated include various compositions of SiOC, SiO2, SiN, SiCN, and SiC deposited deposition on 300 mm (100) silicon wafers. They exhibit a wide range of dielectric constant, sample chemistry, and density.
AB - Interlayer dielectrics with low dielectric constants are needed for current and future ULSI technology nodes. [1,2] However an understanding of the defects which limit reliability and cause increased leakage currents is not yet developed for these low-k films. As reported previously [3], we have observed several performance limiting defects with electron paramagnetic resonance (EPR) that correlate quite strongly to leakage current measurements. We have recently made significant progress in developing a fundamental understanding of how film composition and processing parameters affect specific defects and how these defects are related to leakage currents. In this new work we utilize EPR and leakage current measurements to investigate over fifty low-k dielectrics with potential use as ILDs and ESLs. Films investigated include various compositions of SiOC, SiO2, SiN, SiCN, and SiC deposited deposition on 300 mm (100) silicon wafers. They exhibit a wide range of dielectric constant, sample chemistry, and density.
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U2 - 10.1109/IIRW.2011.6142587
DO - 10.1109/IIRW.2011.6142587
M3 - Conference contribution
AN - SCOPUS:84857589614
SN - 9781457701153
T3 - IEEE International Integrated Reliability Workshop Final Report
SP - 50
EP - 54
BT - 2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011
T2 - 2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011
Y2 - 16 October 2011 through 20 October 2011
ER -