Abstract
Electron spin resonance measurements combined with electrical measurements provide an "atomic scale" understanding of trapping centers in amorphous insulating thin films and their interfaces with silicon.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 129-138 |
| Number of pages | 10 |
| Journal | Microelectronic Engineering |
| Volume | 22 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Aug 1993 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering