Electron spin resonance characterization of Unibond material

J. F. Conley; P. M. Lenahan; B. D. Wallace

Electron spin resonance characterization of Unibond material

J. F. Conley, P. M. Lenahan, B. D. Wallace

Research output: Contribution to conference › Paper › peer-review

Abstract

Unibond is the latest addition to the silicon-on-insulator (SOI) technology which combines the best of SIMOX and BESOI. The process involves four major steps: hydrogen implantation into a thermally grown SiO₂ capped Si wafer; cleaning and bonding with a second Si wafer, two-step annealing at 400 to 600 °C to split at the boundary defined by the implant and at 1100 °C to strengthen the bond interface; and fine polishing to remove the microroughness. Electron spin resonance (ESR) was used to study the physical nature of the defect structures for the charge trapping properties of the Unibond films. ESR provides structural information and allows testing of minimally processed structures making it ideal for studying the charge trapping in SiO₂ films.

Original language	English (US)
Pages	164-165
Number of pages	2
State	Published - 1996
Event	Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA Duration: Sep 30 1996 → Oct 3 1996

Other

Other	Proceedings of the 1996 IEEE International SOI Conference
City	Sanibel Island, FL, USA
Period	9/30/96 → 10/3/96

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Electron spin resonance characterization of Unibond material",

abstract = "Unibond is the latest addition to the silicon-on-insulator (SOI) technology which combines the best of SIMOX and BESOI. The process involves four major steps: hydrogen implantation into a thermally grown SiO2 capped Si wafer; cleaning and bonding with a second Si wafer, two-step annealing at 400 to 600 °C to split at the boundary defined by the implant and at 1100 °C to strengthen the bond interface; and fine polishing to remove the microroughness. Electron spin resonance (ESR) was used to study the physical nature of the defect structures for the charge trapping properties of the Unibond films. ESR provides structural information and allows testing of minimally processed structures making it ideal for studying the charge trapping in SiO2 films.",

author = "Conley, {J. F.} and Lenahan, {P. M.} and Wallace, {B. D.}",

year = "1996",

language = "English (US)",

pages = "164--165",

note = "Proceedings of the 1996 IEEE International SOI Conference ; Conference date: 30-09-1996 Through 03-10-1996",

}

TY - CONF

T1 - Electron spin resonance characterization of Unibond material

AU - Conley, J. F.

AU - Lenahan, P. M.

AU - Wallace, B. D.

PY - 1996

Y1 - 1996

N2 - Unibond is the latest addition to the silicon-on-insulator (SOI) technology which combines the best of SIMOX and BESOI. The process involves four major steps: hydrogen implantation into a thermally grown SiO2 capped Si wafer; cleaning and bonding with a second Si wafer, two-step annealing at 400 to 600 °C to split at the boundary defined by the implant and at 1100 °C to strengthen the bond interface; and fine polishing to remove the microroughness. Electron spin resonance (ESR) was used to study the physical nature of the defect structures for the charge trapping properties of the Unibond films. ESR provides structural information and allows testing of minimally processed structures making it ideal for studying the charge trapping in SiO2 films.

AB - Unibond is the latest addition to the silicon-on-insulator (SOI) technology which combines the best of SIMOX and BESOI. The process involves four major steps: hydrogen implantation into a thermally grown SiO2 capped Si wafer; cleaning and bonding with a second Si wafer, two-step annealing at 400 to 600 °C to split at the boundary defined by the implant and at 1100 °C to strengthen the bond interface; and fine polishing to remove the microroughness. Electron spin resonance (ESR) was used to study the physical nature of the defect structures for the charge trapping properties of the Unibond films. ESR provides structural information and allows testing of minimally processed structures making it ideal for studying the charge trapping in SiO2 films.

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M3 - Paper

AN - SCOPUS:0030385814

SP - 164

EP - 165

T2 - Proceedings of the 1996 IEEE International SOI Conference

Y2 - 30 September 1996 through 3 October 1996

ER -

Electron spin resonance characterization of Unibond material

Abstract

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All Science Journal Classification (ASJC) codes

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