Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO 2

John F. Conley; Patrick M. Lenahan; Aivars J. Lelis; Timothy R. Oldham

doi:10.1063/1.115095

Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO ₂

John F. Conley, Patrick M. Lenahan, Aivars J. Lelis, Timothy R. Oldham

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Abstract

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO₂ gate oxides on Si. Switching oxide traps can]] switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some E_γ^′ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

Original language	English (US)
Pages (from-to)	2179
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115095
State	Published - 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.115095

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abstract = "We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can]] switch{"} charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eγ′ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.",

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T1 - Electron spin resonance evidence for the structure of a switching oxide trap

T2 - Long term structural change at silicon dangling bond sites in SiO 2

AU - Conley, John F.

AU - Lenahan, Patrick M.

AU - Lelis, Aivars J.

AU - Oldham, Timothy R.

PY - 1995

Y1 - 1995

N2 - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can]] switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eγ′ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

AB - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can]] switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eγ′ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

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Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO ₂

Abstract

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