Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

A. Y. Kang; P. M. Lenahan; J. F. Conley

doi:10.1063/1.1621078

Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

A. Y. Kang
, P. M. Lenahan
, J. F. Conley

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

115 Scopus citations

Abstract

The significance of electron spin resonance for studying electron trapping in hafnium oxide on silicon was discussed. Two paramagnetic defects were observed after the photoinjection of electrons into the dielectric. The use of electron injection procedure for the electron spin resonance measurements and for the current-voltage measurements was also analyzed.

Original language	English (US)
Pages (from-to)	3407-3409
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	16
DOIs	https://doi.org/10.1063/1.1621078
State	Published - Oct 20 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1621078

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@article{6fefa03f03984136bff0b37dd779681c,

title = "Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si",

abstract = "The significance of electron spin resonance for studying electron trapping in hafnium oxide on silicon was discussed. Two paramagnetic defects were observed after the photoinjection of electrons into the dielectric. The use of electron injection procedure for the electron spin resonance measurements and for the current-voltage measurements was also analyzed.",

author = "Kang, \{A. Y.\} and Lenahan, \{P. M.\} and Conley, \{J. F.\}",

year = "2003",

month = oct,

day = "20",

doi = "10.1063/1.1621078",

language = "English (US)",

volume = "83",

pages = "3407--3409",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

AU - Kang, A. Y.

AU - Lenahan, P. M.

AU - Conley, J. F.

PY - 2003/10/20

Y1 - 2003/10/20

N2 - The significance of electron spin resonance for studying electron trapping in hafnium oxide on silicon was discussed. Two paramagnetic defects were observed after the photoinjection of electrons into the dielectric. The use of electron injection procedure for the electron spin resonance measurements and for the current-voltage measurements was also analyzed.

AB - The significance of electron spin resonance for studying electron trapping in hafnium oxide on silicon was discussed. Two paramagnetic defects were observed after the photoinjection of electrons into the dielectric. The use of electron injection procedure for the electron spin resonance measurements and for the current-voltage measurements was also analyzed.

UR - https://www.scopus.com/pages/publications/0242496382

UR - https://www.scopus.com/pages/publications/0242496382#tab=citedBy

U2 - 10.1063/1.1621078

DO - 10.1063/1.1621078

M3 - Article

AN - SCOPUS:0242496382

SN - 0003-6951

VL - 83

SP - 3407

EP - 3409

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

Abstract

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