Abstract
We present direct evidence for deep electron traps and structural changes in separation by implanted oxygen (SIMOX) buried oxides and evidence that some positively charged E' centers are compensated by negatively charged centers in SIMOX oxides.
Original language | English (US) |
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Pages (from-to) | 2889-2891 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 60 |
Issue number | 23 |
DOIs | |
State | Published - Dec 1 1992 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)