Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitride

D. Jousse, J. Kanicki, D. T. Krick, P. M. Lenahan

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Silicon nitride films with low defect densities can be prepared by plasma-enhanced chemical vapor deposition with ammonia-to-silane ratios adjusted to obtain N-rich materials. An electron-spin-resonance signal with g value close to 2.002 is reported for such materials, and the defect is identified as a Si atom coordinated to three N atoms as observed earlier in high-temperature chemical vapor deposited silicon nitride. Densities below 101 6 cm-3 are measured for substrate temperatures above 350°C for the first time. The distribution of defects is uniform through the film thickness. A surface defect density of 101 2 cm-2 has also been found in films deposited at 250°C.

Original languageEnglish (US)
Pages (from-to)445-447
Number of pages3
JournalApplied Physics Letters
Issue number6
StatePublished - 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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