Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides

W. L. Warren; P. M. Lenahan

doi:10.1063/1.97391

Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides

W. L. Warren, P. M. Lenahan

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

We find that two paramagnetic]] trivalent silicon" centers appear to be responsible for damage resulting from Fowler-Nordheim injection of electrons into thermal oxides on silicon.

Original language	English (US)
Pages (from-to)	1296-1298
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	19
DOIs	https://doi.org/10.1063/1.97391
State	Published - 1986

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.97391

Cite this

@article{aa23dc7f852a4f06a5cb55290238f29c,

title = "Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides",

abstract = "We find that two paramagnetic]] trivalent silicon{"} centers appear to be responsible for damage resulting from Fowler-Nordheim injection of electrons into thermal oxides on silicon.",

author = "Warren, {W. L.} and Lenahan, {P. M.}",

year = "1986",

doi = "10.1063/1.97391",

language = "English (US)",

volume = "49",

pages = "1296--1298",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides

AU - Warren, W. L.

AU - Lenahan, P. M.

PY - 1986

Y1 - 1986

N2 - We find that two paramagnetic]] trivalent silicon" centers appear to be responsible for damage resulting from Fowler-Nordheim injection of electrons into thermal oxides on silicon.

AB - We find that two paramagnetic]] trivalent silicon" centers appear to be responsible for damage resulting from Fowler-Nordheim injection of electrons into thermal oxides on silicon.

UR - http://www.scopus.com/inward/record.url?scp=51149215455&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51149215455&partnerID=8YFLogxK

U2 - 10.1063/1.97391

DO - 10.1063/1.97391

M3 - Article

AN - SCOPUS:51149215455

SN - 0003-6951

VL - 49

SP - 1296

EP - 1298

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this