Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

A. Y. Kang; P. M. Lenahan; J. F. Conley; R. Solanki

doi:10.1063/1.1494123

Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

A. Y. Kang, P. M. Lenahan, J. F. Conley, R. Solanki

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We report electron spin resonance (ESR) observation of interface defects at the HfO₂/(111)Si boundary for HfO₂ films deposited via atomic layer chemical vapor deposition using Hf(NO₃)₄ as a precursor. We observe several signals, dominated by one due to a silicon dangling bond at the Si/dielectric interface. This center is somewhat similar to, but not identical to, Si/SiO₂ interface silicon dangling bonds. Comparison between ESR and capacitance versus voltage measurements suggests that these dangling bond centers play an important role in HfO₂/Si interface traps.

Original language	English (US)
Pages (from-to)	1128-1130
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	6
DOIs	https://doi.org/10.1063/1.1494123
State	Published - Aug 5 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1494123

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@article{c3d6493ebbc94b80ac76b71622406f18,

title = "Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si",

abstract = "We report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a silicon dangling bond at the Si/dielectric interface. This center is somewhat similar to, but not identical to, Si/SiO2 interface silicon dangling bonds. Comparison between ESR and capacitance versus voltage measurements suggests that these dangling bond centers play an important role in HfO2/Si interface traps.",

author = "Kang, {A. Y.} and Lenahan, {P. M.} and Conley, {J. F.} and R. Solanki",

year = "2002",

month = aug,

day = "5",

doi = "10.1063/1.1494123",

language = "English (US)",

volume = "81",

pages = "1128--1130",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

AU - Kang, A. Y.

AU - Lenahan, P. M.

AU - Conley, J. F.

AU - Solanki, R.

PY - 2002/8/5

Y1 - 2002/8/5

N2 - We report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a silicon dangling bond at the Si/dielectric interface. This center is somewhat similar to, but not identical to, Si/SiO2 interface silicon dangling bonds. Comparison between ESR and capacitance versus voltage measurements suggests that these dangling bond centers play an important role in HfO2/Si interface traps.

AB - We report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a silicon dangling bond at the Si/dielectric interface. This center is somewhat similar to, but not identical to, Si/SiO2 interface silicon dangling bonds. Comparison between ESR and capacitance versus voltage measurements suggests that these dangling bond centers play an important role in HfO2/Si interface traps.

UR - http://www.scopus.com/inward/record.url?scp=79958200231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958200231&partnerID=8YFLogxK

U2 - 10.1063/1.1494123

DO - 10.1063/1.1494123

M3 - Article

AN - SCOPUS:79958200231

SN - 0003-6951

VL - 81

SP - 1128

EP - 1130

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

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