Electron spin resonance study of ISE SOI processed structures

Summary form only given. The electron spin resonance (ESR) measurements show the presence of an orientation-dependent resonance near g = 2.005. Preliminary ESR measurements indicate quite strongly that the resonance is primarily due to a (rather low) density of P_bo centers. The P_bo center is a trivalent silicon defect at a Si/SiO₂ interface with an unpaired electron in an approximately sp³ hybridized orbital pointing out into the oxide. The P_b centers are interface-state defects with two levels in the silicon band gap. The ESR results must be viewed as preliminary in nature. They do however, indicate that these SOI structure exhibit relatively low defect densities. ESR results obtained in SIMOX (separation by implantation of oxygen) and ISE (isolated silicon epitaxy) SOI structures are being compared and etchback studies are being used to determine whether or not other dangling bond centers may be present in the ISE silicon.