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Electronic structure of A narrow-band-gap semiconductor
J. Sofo
, G. Mahan
Physics
Institute for Computational and Data Sciences (ICDS)
Materials Research Institute (MRI)
Research output
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Contribution to journal
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Article
›
peer-review
187
Scopus citations
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Engineering & Materials Science
Narrow band gap semiconductors
100%
Electronic structure
60%
Band structure
57%
Shubnikov-de Haas effect
48%
Energy gap
46%
Fermi surface
45%
Fermi level
35%
Electronic states
32%
Hall effect
27%
Atoms
21%
Chemical Compounds
Shubnikov-De Haas Effect
42%
Electronic Band Structure
41%
Semiconductor
31%
Band Gap
30%
Electronic State
30%
Hall Effect
29%
Effective Mass
28%
Fermi Level
23%
Time
7%
Surface
6%
Physics & Astronomy
narrowband
37%
electronic structure
30%
Fermi surfaces
7%
energy bands
7%
Hall effect
7%
transport properties
6%
optimization
5%
cells
4%
electronics
4%
atoms
4%