TY - JOUR
T1 - Electronic structure of BaPb1-xBixO3
AU - Sofo, J. O.
AU - Aligia, A. A.
AU - Núez Regueiro, M. D.
PY - 1989
Y1 - 1989
N2 - The electronic structure of BaPb1-xBixO3 is calculated taking into account the local disproportionation of the Bi atoms within the coherent-potential approximation. Three different regimes are obtained as a function of the Bi concentration x: normal metal, metallic with a pseudogap, and insulating phase. This allows a satisfactory interpretation of the optical properties, resistivity, Hall, and Seebeck measurements. The agreement is improved when the many-body effects due to the covalency of the Bi-O bonding, invoked previously for the superconductivity, are also considered.
AB - The electronic structure of BaPb1-xBixO3 is calculated taking into account the local disproportionation of the Bi atoms within the coherent-potential approximation. Three different regimes are obtained as a function of the Bi concentration x: normal metal, metallic with a pseudogap, and insulating phase. This allows a satisfactory interpretation of the optical properties, resistivity, Hall, and Seebeck measurements. The agreement is improved when the many-body effects due to the covalency of the Bi-O bonding, invoked previously for the superconductivity, are also considered.
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U2 - 10.1103/PhysRevB.39.9701
DO - 10.1103/PhysRevB.39.9701
M3 - Article
AN - SCOPUS:3042949663
SN - 0163-1829
VL - 39
SP - 9701
EP - 9703
JO - Physical Review B
JF - Physical Review B
IS - 13
ER -