Electrostriction in PZT-family antiferroelectrics

Kenji Uchino, Shoichiro Nomura

Research output: Contribution to journalArticlepeer-review

84 Scopus citations


The elastic strain associated with the field-induced transition from an anti ferroelectric phase to a ferroelectric one has been measured at several temperatures in a PZT-family ceramic Pbo.ggNbo.02[(Zr0.6Sno.s)o.94Ti0.06 lo.9803. Reproducible large strain change of about ARIR 0.l % due to the forced transition may be promising for digital microdisplacement transducers. So-called “inverse hysteresis” in the strain curve is observed in a temperature range between -70°C and 10°C, whichis also useful as a shape memory device for mechanical clamping and similar applications.

Original languageEnglish (US)
Pages (from-to)191-196
Number of pages6
Issue number1
StatePublished - Nov 1 1983

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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