Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy

Binbin Weng; Fanghai Zhao; Jiangang Ma; Guangzhe Yu; Jian Xu; Zhisheng Shi

doi:10.1063/1.3457863

Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy

Binbin Weng, Fanghai Zhao, Jiangang Ma, Guangzhe Yu, Jian Xu, Zhisheng Shi

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A high-quality as-grown PbSe film with a record low threading dislocation density of 9× 10⁵ cm^-2 on patterned Si(111) substrate has been obtained using molecular beam epitaxy. The mechanisms leading to the remarkable reduction in threading dislocation density are analyzed. Based on the analysis, further reduction in dislocation density is anticipated. Materials with such low dislocation density should significantly improve the Si-based IV-VI group device performance.

Original language	English (US)
Article number	251911
Journal	Applied Physics Letters
Volume	96
Issue number	25
DOIs	https://doi.org/10.1063/1.3457863
State	Published - Jun 21 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3457863

Cite this

@article{4473f80eedaf4176865df5b4c3891d58,

title = "Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy",

abstract = "A high-quality as-grown PbSe film with a record low threading dislocation density of 9× 105 cm-2 on patterned Si(111) substrate has been obtained using molecular beam epitaxy. The mechanisms leading to the remarkable reduction in threading dislocation density are analyzed. Based on the analysis, further reduction in dislocation density is anticipated. Materials with such low dislocation density should significantly improve the Si-based IV-VI group device performance.",

author = "Binbin Weng and Fanghai Zhao and Jiangang Ma and Guangzhe Yu and Jian Xu and Zhisheng Shi",

note = "Funding Information: The authors thank Dr. Matthew Kane for helpful discussions. Funding was partially provided by the STTR program of Missile Defense Agency under Contract No. HQ0006-07-C-7657, DoD ARO under Grant Nos. W911NF-07-1-0587 and NSF DMR-0520550, and by Oklahoma OCAST program under Grant No. AR082-052.",

year = "2010",

month = jun,

day = "21",

doi = "10.1063/1.3457863",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy

AU - Weng, Binbin

AU - Zhao, Fanghai

AU - Ma, Jiangang

AU - Yu, Guangzhe

AU - Xu, Jian

AU - Shi, Zhisheng

N1 - Funding Information: The authors thank Dr. Matthew Kane for helpful discussions. Funding was partially provided by the STTR program of Missile Defense Agency under Contract No. HQ0006-07-C-7657, DoD ARO under Grant Nos. W911NF-07-1-0587 and NSF DMR-0520550, and by Oklahoma OCAST program under Grant No. AR082-052.

PY - 2010/6/21

Y1 - 2010/6/21

N2 - A high-quality as-grown PbSe film with a record low threading dislocation density of 9× 105 cm-2 on patterned Si(111) substrate has been obtained using molecular beam epitaxy. The mechanisms leading to the remarkable reduction in threading dislocation density are analyzed. Based on the analysis, further reduction in dislocation density is anticipated. Materials with such low dislocation density should significantly improve the Si-based IV-VI group device performance.

AB - A high-quality as-grown PbSe film with a record low threading dislocation density of 9× 105 cm-2 on patterned Si(111) substrate has been obtained using molecular beam epitaxy. The mechanisms leading to the remarkable reduction in threading dislocation density are analyzed. Based on the analysis, further reduction in dislocation density is anticipated. Materials with such low dislocation density should significantly improve the Si-based IV-VI group device performance.

UR - http://www.scopus.com/inward/record.url?scp=77954046291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954046291&partnerID=8YFLogxK

U2 - 10.1063/1.3457863

DO - 10.1063/1.3457863

M3 - Article

AN - SCOPUS:77954046291

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 251911

ER -

Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this