Abstract
Negative capacitance FETs (NCFETs) have attracted significant interest due to their steep-switching capability at a low voltage and the associated benefits for implementing energy-efficient Boolean logic. While most existing works aim to avoid the I D - V G hysteresis in NCFETs, this paper exploits this hysteresis feature for logic-memory synergy and presents a custom-designed nonvolatile NCFET D flip-flop (DFF) that maintains its state during power outages. This paper also presents an NCFET fabricated for this purpose, showing <10 mV/decade steep hysteresisedges and high, up to seven orders inmagnitude, R DS ratio between the two polarization states. With a device-circuit codesign that takes advantage of the embedded nonvolatility and the high R DS ratio, the proposed DFF consumes negligible static current in backup and restore operations, and remains robust even with significant global and local ferroelectric material variations across a wide 0.3-0.8 V supply voltage range. Therefore, the proposed DFF achieves energy-efficient and low-latency backup and restore operations. Furthermore, it has an ultralow energy-delay overhead, below 2.1% in normal operations, and operates using the same voltage supply as the Boolean logic elements with which it connects. This promises energy-efficient nonvolatile computing in energy-harvesting and power-gating applications.
| Original language | English (US) |
|---|---|
| Article number | 7959653 |
| Pages (from-to) | 3452-3458 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 64 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 2017 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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