Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

M. K. Hudait; Y. Zhu; D. Maurya; S. Priya

doi:10.1063/1.4794838

Energy band alignment of atomic layer deposited HfO₂ on epitaxial (110)Ge grown by molecular beam epitaxy

M. K. Hudait
, Y. Zhu
, D. Maurya
, S. Priya

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The band alignment properties of atomic layer HfO₂ film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO₂ film. The measured valence band offset value of HfO₂ relative to (110)Ge was 2.28 ± 0.05 eV. The extracted conduction band offset value was 2.66 ± 0.1 eV using the bandgaps of HfO₂ of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO₂/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

Original language	English (US)
Article number	093109
Journal	Applied Physics Letters
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.4794838
State	Published - Mar 4 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4794838

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title = "Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy",

abstract = "The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO2 film. The measured valence band offset value of HfO2 relative to (110)Ge was 2.28 ± 0.05 eV. The extracted conduction band offset value was 2.66 ± 0.1 eV using the bandgaps of HfO2 of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO2/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.",

author = "Hudait, \{M. K.\} and Y. Zhu and D. Maurya and S. Priya",

note = "Funding Information: This work is supported in part by Intel Corporation. ",

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doi = "10.1063/1.4794838",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

AU - Hudait, M. K.

AU - Zhu, Y.

AU - Maurya, D.

AU - Priya, S.

N1 - Funding Information: This work is supported in part by Intel Corporation.

PY - 2013/3/4

Y1 - 2013/3/4

N2 - The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO2 film. The measured valence band offset value of HfO2 relative to (110)Ge was 2.28 ± 0.05 eV. The extracted conduction band offset value was 2.66 ± 0.1 eV using the bandgaps of HfO2 of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO2/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

AB - The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO2 film. The measured valence band offset value of HfO2 relative to (110)Ge was 2.28 ± 0.05 eV. The extracted conduction band offset value was 2.66 ± 0.1 eV using the bandgaps of HfO2 of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO2/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093109

ER -

Energy band alignment of atomic layer deposited HfO₂ on epitaxial (110)Ge grown by molecular beam epitaxy

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