Energy band alignment of atomic layer deposited HfO₂ on epitaxial (110)Ge grown by molecular beam epitaxy

Keyphrases

• Molecular Beam Epitaxy 100%
• Epitaxial 100%
• HfO2 100%
• Energy Level Alignment 100%
• Atomic Layer Deposited 100%
• Band Gap 50%
• Offset Value 50%
• HfO2 Films 50%
• Chemical Properties 25%
• X-ray Photoelectron Spectroscopy 25%
• Low Power 25%
• Transistor Device 25%
• Cross-sectional Transmission Electron Microscopy 25%
• Sharp Interface 25%
• Atomic Layers 25%
• Band Offset 25%
• Valence Band Offset 25%
• Band Alignment 25%
• Ge-based 25%
• Conduction Band Offset 25%
• Alignment Properties 25%

Material Science

• Molecular Beam Epitaxy 100%
• Band Offset 100%
• Film 66%
• Transmission Electron Microscopy 33%
• Transistor 33%
• Epilayers 33%
• Metal Oxide 33%
• Chemical Property 33%
• Photoemission Spectroscopy 33%
• Hole Mobility 33%

Engineering

• Atomic Layer 100%
• Energy Band 100%
• Band Offset 100%
• Deposited Film 33%
• Ray Photoelectron Spectroscopy 33%
• Valence Band 33%
• Conduction Band 33%
• Ge System 33%