Energy centric model of SRAM write operation for improved energy and error rates

Swaroop Ghosh

doi:10.1109/CICC.2013.6658429

Energy centric model of SRAM write operation for improved energy and error rates

Swaroop Ghosh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We propose an energy centric model of SRAM write operation. The model provides useful insights about energy and write error rates. We introduce the concept of intrinsic energy margin induced errors. The proposed model is employed for evaluating various write assist mechanisms and their potential in reducing the intrinsic memory error rates. We also demonstrate that this model can be used for optimizing energy of memory arrays.

Original language	English (US)
Title of host publication	Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781467361460
DOIs	https://doi.org/10.1109/CICC.2013.6658429
State	Published - Nov 7 2013
Event	35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013 - San Jose, CA, United States Duration: Sep 22 2013 → Sep 25 2013

Publication series

Name	Proceedings of the Custom Integrated Circuits Conference
ISSN (Print)	0886-5930

Other

Other	35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013
Country/Territory	United States
City	San Jose, CA
Period	9/22/13 → 9/25/13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/CICC.2013.6658429

Cite this

@inproceedings{f0078aad83a04d66b39f1ddd40616eda,

title = "Energy centric model of SRAM write operation for improved energy and error rates",

abstract = "We propose an energy centric model of SRAM write operation. The model provides useful insights about energy and write error rates. We introduce the concept of intrinsic energy margin induced errors. The proposed model is employed for evaluating various write assist mechanisms and their potential in reducing the intrinsic memory error rates. We also demonstrate that this model can be used for optimizing energy of memory arrays.",

author = "Swaroop Ghosh",

year = "2013",

month = nov,

day = "7",

doi = "10.1109/CICC.2013.6658429",

language = "English (US)",

isbn = "9781467361460",

series = "Proceedings of the Custom Integrated Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013",

address = "United States",

note = "35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013 ; Conference date: 22-09-2013 Through 25-09-2013",

}

Ghosh, S 2013, Energy centric model of SRAM write operation for improved energy and error rates. in Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013., 6658429, Proceedings of the Custom Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., 35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013, San Jose, CA, United States, 9/22/13. https://doi.org/10.1109/CICC.2013.6658429

Energy centric model of SRAM write operation for improved energy and error rates. / Ghosh, Swaroop.
Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. 6658429 (Proceedings of the Custom Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Energy centric model of SRAM write operation for improved energy and error rates

AU - Ghosh, Swaroop

PY - 2013/11/7

Y1 - 2013/11/7

N2 - We propose an energy centric model of SRAM write operation. The model provides useful insights about energy and write error rates. We introduce the concept of intrinsic energy margin induced errors. The proposed model is employed for evaluating various write assist mechanisms and their potential in reducing the intrinsic memory error rates. We also demonstrate that this model can be used for optimizing energy of memory arrays.

AB - We propose an energy centric model of SRAM write operation. The model provides useful insights about energy and write error rates. We introduce the concept of intrinsic energy margin induced errors. The proposed model is employed for evaluating various write assist mechanisms and their potential in reducing the intrinsic memory error rates. We also demonstrate that this model can be used for optimizing energy of memory arrays.

UR - http://www.scopus.com/inward/record.url?scp=84892663092&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892663092&partnerID=8YFLogxK

U2 - 10.1109/CICC.2013.6658429

DO - 10.1109/CICC.2013.6658429

M3 - Conference contribution

AN - SCOPUS:84892663092

SN - 9781467361460

T3 - Proceedings of the Custom Integrated Circuits Conference

BT - Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013

Y2 - 22 September 2013 through 25 September 2013

ER -

Energy centric model of SRAM write operation for improved energy and error rates

Abstract

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