Energy level of the nitrogen dangling bond in amorphous silicon nitride

W. L. Warren; J. Kanicki; J. Robertson; P. M. Lenahan

doi:10.1063/1.106222

Energy level of the nitrogen dangling bond in amorphous silicon nitride

W. L. Warren, J. Kanicki, J. Robertson, P. M. Lenahan

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

Original language	English (US)
Pages (from-to)	1699-1701
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	14
DOIs	https://doi.org/10.1063/1.106222
State	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.106222

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title = "Energy level of the nitrogen dangling bond in amorphous silicon nitride",

abstract = "The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.",

author = "Warren, {W. L.} and J. Kanicki and J. Robertson and Lenahan, {P. M.}",

year = "1991",

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language = "English (US)",

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AU - Warren, W. L.

AU - Kanicki, J.

AU - Robertson, J.

AU - Lenahan, P. M.

PY - 1991

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N2 - The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Energy level of the nitrogen dangling bond in amorphous silicon nitride

Abstract

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