Energy level of the nitrogen dangling bond in amorphous silicon nitride

W. L. Warren; J. Kanicki; J. Robertson; P. M. Lenahan

doi:10.1063/1.106222

Energy level of the nitrogen dangling bond in amorphous silicon nitride

W. L. Warren
, J. Kanicki
, J. Robertson
, P. M. Lenahan

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

Original language	English (US)
Pages (from-to)	1699-1701
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	14
DOIs	https://doi.org/10.1063/1.106222
State	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.106222

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title = "Energy level of the nitrogen dangling bond in amorphous silicon nitride",

abstract = "The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.",

author = "Warren, \{W. L.\} and J. Kanicki and J. Robertson and Lenahan, \{P. M.\}",

year = "1991",

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pages = "1699--1701",

journal = "Applied Physics Letters",

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AU - Warren, W. L.

AU - Kanicki, J.

AU - Robertson, J.

AU - Lenahan, P. M.

PY - 1991

Y1 - 1991

N2 - The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

AB - The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

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UR - https://www.scopus.com/pages/publications/0001096427#tab=citedBy

U2 - 10.1063/1.106222

DO - 10.1063/1.106222

M3 - Article

AN - SCOPUS:0001096427

SN - 0003-6951

VL - 59

SP - 1699

EP - 1701

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Energy level of the nitrogen dangling bond in amorphous silicon nitride

Abstract

All Science Journal Classification (ASJC) codes

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