Energy quantization on the current-voltage characteristic of nanoscale two-dimensional mosfet

The current-voltage characteristic for nanoscale MOSFET is presented based to the velocity saturation and quantum confinement. It has been clarified that the drain velocity which is saturated with an increased drain voltage limits the onset of the current saturation. In the presence of high electric field, the motion of the velocity saturation that is randomly oriented in the equilibrium becomes streamlined and unidirectional. The model presents the current-voltage characteristic from the drift-diffusion regime to the ballistic regime with the presence of the quantum confinement on the charge carrier distribution and the energy quantization. The obtained results are considered in the modeling of the current-voltage characteristics of nanoscale two-dimensional MOSFET and show good agreement with the experimental data without using any artificial parameters.