Energy relaxation of hot carriers in single-wall carbon nanotubes by surface optical phonons of the substrate

A. G. Petrov; S. V. Rotkin

doi:10.1134/S0021364006150124

Energy relaxation of hot carriers in single-wall carbon nanotubes by surface optical phonons of the substrate

A. G. Petrov, S. V. Rotkin

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

A new mechanism is proposed for the energy relaxation of hot carriers in single-wall carbon nanotubes: scattering with the emission of surface optical phonons into the semiconductor substrate. The theory involves intrasubband and intersubband forward and backward scattering. The analytical result and numerical data indicate that intrasubband forward scattering is the main process: the corresponding lifetime comprises several femtoseconds for a quartz substrate, which allows this mechanism of energy relaxation to be considered dominating for a nanotube on the surface of a polar semiconductor or a dielectric.

Original language	English (US)
Pages (from-to)	156-160
Number of pages	5
Journal	JETP Letters
Volume	84
Issue number	3
DOIs	https://doi.org/10.1134/S0021364006150124
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1134/S0021364006150124

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title = "Energy relaxation of hot carriers in single-wall carbon nanotubes by surface optical phonons of the substrate",

abstract = "A new mechanism is proposed for the energy relaxation of hot carriers in single-wall carbon nanotubes: scattering with the emission of surface optical phonons into the semiconductor substrate. The theory involves intrasubband and intersubband forward and backward scattering. The analytical result and numerical data indicate that intrasubband forward scattering is the main process: the corresponding lifetime comprises several femtoseconds for a quartz substrate, which allows this mechanism of energy relaxation to be considered dominating for a nanotube on the surface of a polar semiconductor or a dielectric.",

author = "Petrov, {A. G.} and Rotkin, {S. V.}",

note = "Funding Information: S.V.R. is grateful to Prof. P. Vogl for discussions stimulating this work and also to NSF for support in the framework of project no. 0609050, the Center for Advanced Materials and Nanotechnology (CAMN, Lehigh University), and the Center for Optical Technologies (COT, Lehigh University).",

year = "2006",

doi = "10.1134/S0021364006150124",

language = "English (US)",

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pages = "156--160",

journal = "JETP Letters",

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T1 - Energy relaxation of hot carriers in single-wall carbon nanotubes by surface optical phonons of the substrate

AU - Petrov, A. G.

AU - Rotkin, S. V.

N1 - Funding Information: S.V.R. is grateful to Prof. P. Vogl for discussions stimulating this work and also to NSF for support in the framework of project no. 0609050, the Center for Advanced Materials and Nanotechnology (CAMN, Lehigh University), and the Center for Optical Technologies (COT, Lehigh University).

PY - 2006

Y1 - 2006

N2 - A new mechanism is proposed for the energy relaxation of hot carriers in single-wall carbon nanotubes: scattering with the emission of surface optical phonons into the semiconductor substrate. The theory involves intrasubband and intersubband forward and backward scattering. The analytical result and numerical data indicate that intrasubband forward scattering is the main process: the corresponding lifetime comprises several femtoseconds for a quartz substrate, which allows this mechanism of energy relaxation to be considered dominating for a nanotube on the surface of a polar semiconductor or a dielectric.

AB - A new mechanism is proposed for the energy relaxation of hot carriers in single-wall carbon nanotubes: scattering with the emission of surface optical phonons into the semiconductor substrate. The theory involves intrasubband and intersubband forward and backward scattering. The analytical result and numerical data indicate that intrasubband forward scattering is the main process: the corresponding lifetime comprises several femtoseconds for a quartz substrate, which allows this mechanism of energy relaxation to be considered dominating for a nanotube on the surface of a polar semiconductor or a dielectric.

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JO - JETP Letters

JF - JETP Letters

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Energy relaxation of hot carriers in single-wall carbon nanotubes by surface optical phonons of the substrate

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