Energy resolved spin dependent trap assisted tunneling investigation of silc related defects

We demonstrate energy resolved spin dependent trap assisted tunneling in 1.2nm effective oxide thickness silicon oxynitride film subject to room temperature electric field stressing. Our observations introduce a simple method to link point defect structure and energy levels in a very direct way. We obtain defect energy level resolution of SILC related defects by exploiting the enormous difference between the capacitance of the very thin dielectric and the capacitance of the depletion of the silicon. The simplicity of the technique and the robust character of the response make it, at least potentially, of widespread utility in the understanding of defects important in microelectronics.