Engineering nanoscale polarization at the SrTiO3/Ge interface

Tony Le; Onur Kurt; Jun Ouyang; Jianjun Wang; Long Qing Chen; Edward L. Lin; John G. Ekerdt; Yuhang Ren

doi:10.1016/j.scriptamat.2019.12.033

Engineering nanoscale polarization at the SrTiO₃/Ge interface

Tony Le, Onur Kurt, Jun Ouyang, Jianjun Wang, Long Qing Chen, Edward L. Lin, John G. Ekerdt, Yuhang Ren

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO₃ (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a₁/a₂ domain pattern with a stable net polarization along the [110] in-plane direction is revealed.

Original language	English (US)
Pages (from-to)	489-492
Number of pages	4
Journal	Scripta Materialia
Volume	178
DOIs	https://doi.org/10.1016/j.scriptamat.2019.12.033
State	Published - Mar 15 2020

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2019.12.033

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title = "Engineering nanoscale polarization at the SrTiO3/Ge interface",

abstract = "The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO3 (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a1/a2 domain pattern with a stable net polarization along the [110] in-plane direction is revealed.",

author = "Tony Le and Onur Kurt and Jun Ouyang and Jianjun Wang and Chen, {Long Qing} and Lin, {Edward L.} and Ekerdt, {John G.} and Yuhang Ren",

note = "Funding Information: This work was supported in part by the Air Force Office of Scientific Research (Grant Nos. FA9550-17-1-0339 and FA9550-17-1-0342 (TL, OK, JO, and YHR); Grant No. FA9550-18-1-0053 (ELL and JGE)), and the Army Research Office under grant number W911NF-17-1-0462 (JJW and LQC). Publisher Copyright: {\textcopyright} 2019",

year = "2020",

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doi = "10.1016/j.scriptamat.2019.12.033",

language = "English (US)",

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T1 - Engineering nanoscale polarization at the SrTiO3/Ge interface

AU - Le, Tony

AU - Kurt, Onur

AU - Ouyang, Jun

AU - Wang, Jianjun

AU - Chen, Long Qing

AU - Lin, Edward L.

AU - Ekerdt, John G.

AU - Ren, Yuhang

N1 - Funding Information: This work was supported in part by the Air Force Office of Scientific Research (Grant Nos. FA9550-17-1-0339 and FA9550-17-1-0342 (TL, OK, JO, and YHR); Grant No. FA9550-18-1-0053 (ELL and JGE)), and the Army Research Office under grant number W911NF-17-1-0462 (JJW and LQC). Publisher Copyright: © 2019

PY - 2020/3/15

Y1 - 2020/3/15

N2 - The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO3 (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a1/a2 domain pattern with a stable net polarization along the [110] in-plane direction is revealed.

AB - The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO3 (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a1/a2 domain pattern with a stable net polarization along the [110] in-plane direction is revealed.

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SP - 489

EP - 492

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Engineering nanoscale polarization at the SrTiO₃/Ge interface

Abstract

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