TY - GEN
T1 - Engineering p-n junctions in grapbene/molybdenum disulfide heterostructures
AU - Subramania, Shruti
AU - Xu, Ke
AU - Moser, Simon K.
AU - Deng, Donna
AU - Li, Jun
AU - Feenstra, Randall M.
AU - Fullerton-Shirey, Susan K.
AU - Robinson, Joshua A.
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - Engineering p-n junctions in two-dimensional (2D) materials, specifically transition metal dichalcogenides (TMDs), entails choosing the right combination of materials in order to form the appropriate alignment of bands. A bi-polar junction having a heterogenous combinations of materials has traditionally been used for several applications such as rectifiers, photovoltaics, etc, which require separation of charge carriers. Various researchers have studied the synthesis and properties of p-n junctions in TMD-TMD heterostructures, like MoS/WSe, Mos/ws, etc.1 In this work, we show the formation of a low resistance p-n junction between graphene and molybdenum disulfide (MOS), which harnesses the high thermal and electronic mobility of graphene, which semiconducting TMDs do not provide. Our work employs epitaxial graphene (EG) on silicon carbide substrates, which has the unique property of doping modulation using hydrogen intercalation.2,3 This has not been exploited previously to construct devices using graphene-based heterostructures.
AB - Engineering p-n junctions in two-dimensional (2D) materials, specifically transition metal dichalcogenides (TMDs), entails choosing the right combination of materials in order to form the appropriate alignment of bands. A bi-polar junction having a heterogenous combinations of materials has traditionally been used for several applications such as rectifiers, photovoltaics, etc, which require separation of charge carriers. Various researchers have studied the synthesis and properties of p-n junctions in TMD-TMD heterostructures, like MoS/WSe, Mos/ws, etc.1 In this work, we show the formation of a low resistance p-n junction between graphene and molybdenum disulfide (MOS), which harnesses the high thermal and electronic mobility of graphene, which semiconducting TMDs do not provide. Our work employs epitaxial graphene (EG) on silicon carbide substrates, which has the unique property of doping modulation using hydrogen intercalation.2,3 This has not been exploited previously to construct devices using graphene-based heterostructures.
UR - http://www.scopus.com/inward/record.url?scp=85083259891&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85083259891&partnerID=8YFLogxK
U2 - 10.1109/DRC46940.2019.9046431
DO - 10.1109/DRC46940.2019.9046431
M3 - Conference contribution
AN - SCOPUS:85083259891
T3 - Device Research Conference - Conference Digest, DRC
SP - 83
EP - 84
BT - 2019 Device Research Conference, DRC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Device Research Conference, DRC 2019
Y2 - 23 June 2019 through 26 June 2019
ER -