Enhanced charge storage characteristics of silicon nanocrystals fabicated by electron-beam coevaporation of Si and SiOx(x=1 or 2)

Chen Chen, Rui Jia, Weilong Li, Haofeng Li, Tianchun Ye, Xinyu Liu, Ming Liu, Seiya Kasai, Hashizume Tamotsu, Nanjian Wu

Research output: Contribution to journalArticlepeer-review

Abstract

In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiO x(x=1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under ±8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.

Original languageEnglish (US)
Pages (from-to)2462-2467
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number6
DOIs
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Enhanced charge storage characteristics of silicon nanocrystals fabicated by electron-beam coevaporation of Si and SiOx(x=1 or 2)'. Together they form a unique fingerprint.

Cite this