Enhanced charge storage characteristics of silicon nanocrystals fabicated by electron-beam coevaporation of Si and SiOx(x=1 or 2)

Chen Chen; Rui Jia; Weilong Li; Haofeng Li; Tianchun Ye; Xinyu Liu; Ming Liu; Seiya Kasai; Hashizume Tamotsu; Nanjian Wu

doi:10.1116/1.3264482

Enhanced charge storage characteristics of silicon nanocrystals fabicated by electron-beam coevaporation of Si and SiO_{x(x=1 or 2)}

Chen Chen, Rui Jia, Weilong Li, Haofeng Li, Tianchun Ye, Xinyu Liu, Ming Liu, Seiya Kasai, Hashizume Tamotsu, Nanjian Wu

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

Abstract

In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiO _{x(x=1 or 2)} were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under ±8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.

Original language	English (US)
Pages (from-to)	2462-2467
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	6
DOIs	https://doi.org/10.1116/1.3264482
State	Published - 2009

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.3264482

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Chen, C., Jia, R., Li, W., Li, H., Ye, T., Liu, X., Liu, M., Kasai, S., Tamotsu, H., & Wu, N. (2009). Enhanced charge storage characteristics of silicon nanocrystals fabicated by electron-beam coevaporation of Si and SiO_{x(x=1 or 2)}. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), 2462-2467. https://doi.org/10.1116/1.3264482

@article{20d2ff9a2c264fa88b0f1c2012465d99,

title = "Enhanced charge storage characteristics of silicon nanocrystals fabicated by electron-beam coevaporation of Si and SiOx(x=1 or 2)",

abstract = "In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiO x(x=1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under ±8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.",

author = "Chen Chen and Rui Jia and Weilong Li and Haofeng Li and Tianchun Ye and Xinyu Liu and Ming Liu and Seiya Kasai and Hashizume Tamotsu and Nanjian Wu",

note = "Funding Information: This work was subsidized by the 973 Projects under Grant Nos. 2006CB604904 and 2009CB939703, by the Chinese NSF under Grant Nos. 60706023, 60676001, 90401002, and 90607022, by CAS under Grant No. YZ0635, and by CAS “Bai Ren Ji Hua,” China. Also this work was also subsidized by PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012, Japan.",

year = "2009",

doi = "10.1116/1.3264482",

language = "English (US)",

volume = "27",

pages = "2462--2467",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

Chen, C, Jia, R, Li, W, Li, H, Ye, T, Liu, X, Liu, M, Kasai, S, Tamotsu, H & Wu, N 2009, 'Enhanced charge storage characteristics of silicon nanocrystals fabicated by electron-beam coevaporation of Si and SiO_{x(x=1 or 2)}', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 6, pp. 2462-2467. https://doi.org/10.1116/1.3264482

TY - JOUR

T1 - Enhanced charge storage characteristics of silicon nanocrystals fabicated by electron-beam coevaporation of Si and SiOx(x=1 or 2)

AU - Chen, Chen

AU - Jia, Rui

AU - Li, Weilong

AU - Li, Haofeng

AU - Ye, Tianchun

AU - Liu, Xinyu

AU - Liu, Ming

AU - Kasai, Seiya

AU - Tamotsu, Hashizume

AU - Wu, Nanjian

N1 - Funding Information: This work was subsidized by the 973 Projects under Grant Nos. 2006CB604904 and 2009CB939703, by the Chinese NSF under Grant Nos. 60706023, 60676001, 90401002, and 90607022, by CAS under Grant No. YZ0635, and by CAS “Bai Ren Ji Hua,” China. Also this work was also subsidized by PRESTO, Japan Science and Technology Agency, 4-1-8, Honcho, Kawaguchi-shi, Saitama 332-0012, Japan.

PY - 2009

Y1 - 2009

N2 - In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiO x(x=1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under ±8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.

AB - In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiO x(x=1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under ±8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Enhanced charge storage characteristics of silicon nanocrystals fabicated by electron-beam coevaporation of Si and SiO_{x(x=1 or 2)}

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