Enhanced domain contribution to ferroelectric properties in freestanding thick films

Jungho Ryu; Shashank Priya; Chee Sung Park; Kun Young Kim; Jong Jin Choi; Byung Dong Hahn; Woon Ha Yoon; Byoung Kuk Lee; Dong Soo Park; Chan Park

doi:10.1063/1.3181058

Enhanced domain contribution to ferroelectric properties in freestanding thick films

Jungho Ryu, Shashank Priya, Chee Sung Park, Kun Young Kim, Jong Jin Choi, Byung Dong Hahn, Woon Ha Yoon, Byoung Kuk Lee, Dong Soo Park, Chan Park

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We report the success in fabricating clamped, island, and freestanding 10 μm thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon (Pt/Ti/ SiO₂ /Si) substrate and crystallization was conducted by annealing at 700 °C. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy.

Original language	English (US)
Article number	024108
Journal	Journal of Applied Physics
Volume	106
Issue number	2
DOIs	https://doi.org/10.1063/1.3181058
State	Published - 2009

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3181058

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title = "Enhanced domain contribution to ferroelectric properties in freestanding thick films",

abstract = "We report the success in fabricating clamped, island, and freestanding 10 μm thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon (Pt/Ti/ SiO2 /Si) substrate and crystallization was conducted by annealing at 700 °C. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy.",

author = "Jungho Ryu and Shashank Priya and Park, {Chee Sung} and Kim, {Kun Young} and Choi, {Jong Jin} and Hahn, {Byung Dong} and Yoon, {Woon Ha} and Lee, {Byoung Kuk} and Park, {Dong Soo} and Chan Park",

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T1 - Enhanced domain contribution to ferroelectric properties in freestanding thick films

AU - Ryu, Jungho

AU - Priya, Shashank

AU - Park, Chee Sung

AU - Kim, Kun Young

AU - Choi, Jong Jin

AU - Hahn, Byung Dong

AU - Yoon, Woon Ha

AU - Lee, Byoung Kuk

AU - Park, Dong Soo

AU - Park, Chan

PY - 2009

Y1 - 2009

N2 - We report the success in fabricating clamped, island, and freestanding 10 μm thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon (Pt/Ti/ SiO2 /Si) substrate and crystallization was conducted by annealing at 700 °C. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy.

AB - We report the success in fabricating clamped, island, and freestanding 10 μm thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon (Pt/Ti/ SiO2 /Si) substrate and crystallization was conducted by annealing at 700 °C. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy.

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Enhanced domain contribution to ferroelectric properties in freestanding thick films

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