Enhanced domain contribution to ferroelectric properties in freestanding thick films

Keyphrases

• Room Temperature 100%
• Ferroelectric Properties 100%
• Thick Film 100%
• Free-standing Film 100%
• Silica 50%
• Crystallization 50%
• Nozzle 50%
• Si Substrate 50%
• Annealing 50%
• Piezoelectric Thick Film 50%
• Annealing Temperature 50%
• Cooling Rate 50%
• Piezoresponse Force Microscopy 50%
• Piezoelectric Particles 50%
• Dielectric Characterization 50%
• Internal Stress 50%
• Ferroelectric Measurement 50%
• Aerosol Deposition 50%

Engineering

• Room Temperature 100%
• Piezoelectric 100%
• Dielectrics 50%
• Si Substrate 50%
• Cooling Rate 50%
• Annealing Temperature 50%
• Internal Stress 50%

Material Science

• Film 100%
• Ferroelectricity 100%
• Thick Films 100%
• Ferroelectric Material 40%
• Piezoelectricity 40%
• Silicon 20%