Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

H. A. Basantani; S. Kozlowski; Myung Yoon Lee; J. Li; E. C. Dickey; T. N. Jackson; S. S.N. Bharadwaja; M. Horn

doi:10.1063/1.4731240

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

H. A. Basantani
, S. Kozlowski
, Myung Yoon Lee
, J. Li
, E. C. Dickey
, T. N. Jackson
, S. S.N. Bharadwaja
, M. Horn

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Thin films of VO _x (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VO _x samples. The resistivity of nanotwinned VO _x films ranged from 4 mΩ·cm to 0.6 Ω·cm and corresponding temperature coefficient of resistance between -0.1 and -2.6 per K, respectively. The 1/f electrical noise was analyzed in these VO _x samples using the Hooge-Vandamme relation. These VO _x films are comparable or surpass commercial VO _x films deposited by ion beam sputtering.

Original language	English (US)
Article number	262108
Journal	Applied Physics Letters
Volume	100
Issue number	26
DOIs	https://doi.org/10.1063/1.4731240
State	Published - Jun 25 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4731240

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@article{c142f5e558b243cd80d7443ae3c27073,

title = "Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering",

abstract = "Thin films of VO x (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VO x samples. The resistivity of nanotwinned VO x films ranged from 4 mΩ·cm to 0.6 Ω·cm and corresponding temperature coefficient of resistance between -0.1 and -2.6 per K, respectively. The 1/f electrical noise was analyzed in these VO x samples using the Hooge-Vandamme relation. These VO x films are comparable or surpass commercial VO x films deposited by ion beam sputtering.",

author = "Basantani, \{H. A.\} and S. Kozlowski and Lee, \{Myung Yoon\} and J. Li and Dickey, \{E. C.\} and Jackson, \{T. N.\} and Bharadwaja, \{S. S.N.\} and M. Horn",

note = "Funding Information: The authors would sincerely like to acknowledge Dr. N. J. Podraza and M. A. Motyka for assisting to estimate thickness of VO films using ellipsometry and W. R. Drawl, Associate Research Engineer in Material Research Institute at Penn State University, for fruitful discussions. This work is sponsored by the U.S. Army Research Office and U.S. Army Research Laboratory under Cooperative Agreement No. W911NF-0-2-0026. x",

year = "2012",

month = jun,

day = "25",

doi = "10.1063/1.4731240",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

AU - Basantani, H. A.

AU - Kozlowski, S.

AU - Lee, Myung Yoon

AU - Li, J.

AU - Dickey, E. C.

AU - Jackson, T. N.

AU - Bharadwaja, S. S.N.

AU - Horn, M.

N1 - Funding Information: The authors would sincerely like to acknowledge Dr. N. J. Podraza and M. A. Motyka for assisting to estimate thickness of VO films using ellipsometry and W. R. Drawl, Associate Research Engineer in Material Research Institute at Penn State University, for fruitful discussions. This work is sponsored by the U.S. Army Research Office and U.S. Army Research Laboratory under Cooperative Agreement No. W911NF-0-2-0026. x

PY - 2012/6/25

Y1 - 2012/6/25

N2 - Thin films of VO x (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VO x samples. The resistivity of nanotwinned VO x films ranged from 4 mΩ·cm to 0.6 Ω·cm and corresponding temperature coefficient of resistance between -0.1 and -2.6 per K, respectively. The 1/f electrical noise was analyzed in these VO x samples using the Hooge-Vandamme relation. These VO x films are comparable or surpass commercial VO x films deposited by ion beam sputtering.

AB - Thin films of VO x (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VO x samples. The resistivity of nanotwinned VO x films ranged from 4 mΩ·cm to 0.6 Ω·cm and corresponding temperature coefficient of resistance between -0.1 and -2.6 per K, respectively. The 1/f electrical noise was analyzed in these VO x samples using the Hooge-Vandamme relation. These VO x films are comparable or surpass commercial VO x films deposited by ion beam sputtering.

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DO - 10.1063/1.4731240

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SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262108

ER -

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

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