Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFe O 3 Bi 3.25 Sm 0.75 Ti 2.98 V 0.02 O 12 double-layered thin film

Zhenxiang Cheng; Xiaolin Wang; Chinna Venkatasamy Kannan; Kyoshi Ozawa; Hideo Kimura; Takashi Nishida; Shujun Zhang; Thomas R. Shrout

doi:10.1063/1.2191732

Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFe O ₃ Bi _3.25 Sm _0.75 Ti _2.98 V _0.02 O ₁₂ double-layered thin film

Zhenxiang Cheng, Xiaolin Wang, Chinna Venkatasamy Kannan, Kyoshi Ozawa, Hideo Kimura, Takashi Nishida, Shujun Zhang, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

Multiferroic BiFe O3 Bi3.25 Sm0.75 Ti2.98 V0.02 O12 double-layered thin films on PtTiSi O2 Si were fabricated using the pulsed-laser deposition technique. The films showed greatly enhanced ferroelectric and ferromagnetic properties. The values of the remanent polarization (2 Pr) and coercive field (Ec) were 71.8 μC cm2 and 148 kVcm at a maximum applied voltage of 13 V, respectively. The value of the magnetic moment was found to be 17.5 emu cm3. The enhancement of the polarization originated from the BiFe O3 with Bi3.25 Sm0.75 Ti2.98 V0.02 O12 working as a barrier layer. The enhancement of the magnetization is from the structural distortion of BiFe O3, due to partial epitaxial growth on the bismuth titanate surface.

Original language	English (US)
Article number	132909
Journal	Applied Physics Letters
Volume	88
Issue number	13
DOIs	https://doi.org/10.1063/1.2191732
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2191732

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@article{93d4eefe93d147649c2d8a4862a02b00,

title = "Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFe O 3 Bi 3.25 Sm 0.75 Ti 2.98 V 0.02 O 12 double-layered thin film",

abstract = "Multiferroic BiFe O3 Bi3.25 Sm0.75 Ti2.98 V0.02 O12 double-layered thin films on PtTiSi O2 Si were fabricated using the pulsed-laser deposition technique. The films showed greatly enhanced ferroelectric and ferromagnetic properties. The values of the remanent polarization (2 Pr) and coercive field (Ec) were 71.8 μC cm2 and 148 kVcm at a maximum applied voltage of 13 V, respectively. The value of the magnetic moment was found to be 17.5 emu cm3. The enhancement of the polarization originated from the BiFe O3 with Bi3.25 Sm0.75 Ti2.98 V0.02 O12 working as a barrier layer. The enhancement of the magnetization is from the structural distortion of BiFe O3, due to partial epitaxial growth on the bismuth titanate surface.",

author = "Zhenxiang Cheng and Xiaolin Wang and Kannan, \{Chinna Venkatasamy\} and Kyoshi Ozawa and Hideo Kimura and Takashi Nishida and Shujun Zhang and Shrout, \{Thomas R.\}",

note = "Funding Information: This work is supported in part by funds from the Japan Society for Promotion of Science (JSPS) and funds from the ARC through Discovery projects (DP0558753). ",

year = "2006",

doi = "10.1063/1.2191732",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFe O 3 Bi 3.25 Sm 0.75 Ti 2.98 V 0.02 O 12 double-layered thin film

AU - Cheng, Zhenxiang

AU - Wang, Xiaolin

AU - Kannan, Chinna Venkatasamy

AU - Ozawa, Kyoshi

AU - Kimura, Hideo

AU - Nishida, Takashi

AU - Zhang, Shujun

AU - Shrout, Thomas R.

N1 - Funding Information: This work is supported in part by funds from the Japan Society for Promotion of Science (JSPS) and funds from the ARC through Discovery projects (DP0558753).

PY - 2006

Y1 - 2006

N2 - Multiferroic BiFe O3 Bi3.25 Sm0.75 Ti2.98 V0.02 O12 double-layered thin films on PtTiSi O2 Si were fabricated using the pulsed-laser deposition technique. The films showed greatly enhanced ferroelectric and ferromagnetic properties. The values of the remanent polarization (2 Pr) and coercive field (Ec) were 71.8 μC cm2 and 148 kVcm at a maximum applied voltage of 13 V, respectively. The value of the magnetic moment was found to be 17.5 emu cm3. The enhancement of the polarization originated from the BiFe O3 with Bi3.25 Sm0.75 Ti2.98 V0.02 O12 working as a barrier layer. The enhancement of the magnetization is from the structural distortion of BiFe O3, due to partial epitaxial growth on the bismuth titanate surface.

AB - Multiferroic BiFe O3 Bi3.25 Sm0.75 Ti2.98 V0.02 O12 double-layered thin films on PtTiSi O2 Si were fabricated using the pulsed-laser deposition technique. The films showed greatly enhanced ferroelectric and ferromagnetic properties. The values of the remanent polarization (2 Pr) and coercive field (Ec) were 71.8 μC cm2 and 148 kVcm at a maximum applied voltage of 13 V, respectively. The value of the magnetic moment was found to be 17.5 emu cm3. The enhancement of the polarization originated from the BiFe O3 with Bi3.25 Sm0.75 Ti2.98 V0.02 O12 working as a barrier layer. The enhancement of the magnetization is from the structural distortion of BiFe O3, due to partial epitaxial growth on the bismuth titanate surface.

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U2 - 10.1063/1.2191732

DO - 10.1063/1.2191732

M3 - Article

AN - SCOPUS:33645527564

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132909

ER -

Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFe O ₃ Bi _3.25 Sm _0.75 Ti _2.98 V _0.02 O ₁₂ double-layered thin film

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