TY - JOUR
T1 - Enhanced electrocaloric effect and energy-storage performance in PBLZT films with various Ba2+ content
AU - Gao, Hongcheng
AU - Sun, Ningning
AU - Li, Yong
AU - Zhang, Qiwei
AU - Hao, Xihong
AU - Kong, Ling Bing
AU - Wang, Qing
N1 - Funding Information:
The authors would like to acknowledge the financial support by the Ministry of Sciences and Technology of China through 973-project ( 2014CB660811 ), the National Natural Science Foundation of China ( 51462027 ), the Program for Innovative Research Team in Universities of Inner Mongolia Autonomous Region ( NMGIRT-A1605 ), the Innovation Guide Fund of Baotou ( CX2015-8 ) and the Innovation Program of Inner Monglia University of Science and Technology ( 2014QNGG01 ).
Publisher Copyright:
© 2016 Elsevier Ltd and Techna Group S.r.l.
PY - 2016/11/15
Y1 - 2016/11/15
N2 - (100)-oriented Pb(0.90−x)BaxLa0.10Zr0.90Ti0.10O3 (x=0, 0.02, 0.05 and 0.11) antiferroelectric thick films were deposited on LaNiO3/Si (100) substrates by the sol-gel process. The influences of Ba2+ content on the dielectric properties, electrocaloric effect (ECE), energy-storage performance and leakage current were systematically investigated. With Ba2+ content increasing, the temperature (Tm) corresponding to the maximum dielectric constant of the thick films was decreased, while their diffuseness was increased. The maximum ECE ∆T=18.1 °C was obtained in the thick film with x=0.05 at room temperature under ∆E=700 kV/cm. The maximum energy storage density of 42.3 J/cm3 and the corresponding efficiency of 68% was achieved in the film with x=0.11, companied by a power density of 0.53 MW/cm3, due to its high breakdown strength. In addition, a small leakage current density (<10−5 A/cm2) were attained in these films at room temperature. In conclusion, we believe that this kind of antiferroelctric thick film is a potential candidate for applications in solid cooling devices and the energy-storage systems.
AB - (100)-oriented Pb(0.90−x)BaxLa0.10Zr0.90Ti0.10O3 (x=0, 0.02, 0.05 and 0.11) antiferroelectric thick films were deposited on LaNiO3/Si (100) substrates by the sol-gel process. The influences of Ba2+ content on the dielectric properties, electrocaloric effect (ECE), energy-storage performance and leakage current were systematically investigated. With Ba2+ content increasing, the temperature (Tm) corresponding to the maximum dielectric constant of the thick films was decreased, while their diffuseness was increased. The maximum ECE ∆T=18.1 °C was obtained in the thick film with x=0.05 at room temperature under ∆E=700 kV/cm. The maximum energy storage density of 42.3 J/cm3 and the corresponding efficiency of 68% was achieved in the film with x=0.11, companied by a power density of 0.53 MW/cm3, due to its high breakdown strength. In addition, a small leakage current density (<10−5 A/cm2) were attained in these films at room temperature. In conclusion, we believe that this kind of antiferroelctric thick film is a potential candidate for applications in solid cooling devices and the energy-storage systems.
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U2 - 10.1016/j.ceramint.2016.08.054
DO - 10.1016/j.ceramint.2016.08.054
M3 - Review article
AN - SCOPUS:84995376681
SN - 0272-8842
VL - 42
SP - 16439
EP - 16447
JO - Ceramics International
JF - Ceramics International
IS - 15
ER -