TY - JOUR
T1 - Enhanced electromechanical properties and thermal stability of antimony-modified BiScO3-PbTiO3 high-temperature piezoelectric ceramics
AU - Ren, Xiaodan
AU - Liu, Xin
AU - Tang, Mingyang
AU - Wang, Yike
AU - Xu, Zhuo
AU - Yan, Yongke
N1 - Funding Information:
Z.X. thanks the support of the National Natural Science Foundation of China (No. 52032010 ).
Publisher Copyright:
© 2023 Elsevier Ltd and Techna Group S.r.l.
PY - 2023/8/1
Y1 - 2023/8/1
N2 - The search for a suitable donor dopant to improve the piezoelectric response of BiScO3-PbTiO3 (BS-PT) piezoelectric ceramics without sacrificing temperature stability is crucial for developing high-temperature piezoelectric materials for the application in the elevated temperature. In this study, the effects of Sb5+ donor doping on the microstructure, dielectric, ferroelectric, piezoelectric and electromechanical properties of the BS-PT ceramics were investigated. It was found that the Sb5+ dopant acts as the grain growth inhibitor, resulting in a dense and fine-grain microstructure. An enhanced piezoelectric properties d33 of 535 pC N−1 with a high Tc of 440 °C was simultaneously achieved in 0.25 mol%Sb5+ doped BS-PT (BSPT-0.25Sb) ceramic. The results of in-situ piezoelectric constants and electromechanical coupling coefficients as a function of temperature indicate that the BSPT-0.25Sb ceramic has a high depolarization temperature Td of 400 °C, which is much higher than those of the most widely used PZT-based piezoelectric ceramics. Furthermore, BSPT-0.25Sb ceramic has much higher resistivity and lower dielectric loss than PZT-4 and PZT-8 at high temperature. The excellent piezoelectric properties and thermal stability of the BSPT-0.25Sb ceramic indicate that it is a promising piezoelectric material for high-temperature applications.
AB - The search for a suitable donor dopant to improve the piezoelectric response of BiScO3-PbTiO3 (BS-PT) piezoelectric ceramics without sacrificing temperature stability is crucial for developing high-temperature piezoelectric materials for the application in the elevated temperature. In this study, the effects of Sb5+ donor doping on the microstructure, dielectric, ferroelectric, piezoelectric and electromechanical properties of the BS-PT ceramics were investigated. It was found that the Sb5+ dopant acts as the grain growth inhibitor, resulting in a dense and fine-grain microstructure. An enhanced piezoelectric properties d33 of 535 pC N−1 with a high Tc of 440 °C was simultaneously achieved in 0.25 mol%Sb5+ doped BS-PT (BSPT-0.25Sb) ceramic. The results of in-situ piezoelectric constants and electromechanical coupling coefficients as a function of temperature indicate that the BSPT-0.25Sb ceramic has a high depolarization temperature Td of 400 °C, which is much higher than those of the most widely used PZT-based piezoelectric ceramics. Furthermore, BSPT-0.25Sb ceramic has much higher resistivity and lower dielectric loss than PZT-4 and PZT-8 at high temperature. The excellent piezoelectric properties and thermal stability of the BSPT-0.25Sb ceramic indicate that it is a promising piezoelectric material for high-temperature applications.
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U2 - 10.1016/j.ceramint.2023.05.108
DO - 10.1016/j.ceramint.2023.05.108
M3 - Article
AN - SCOPUS:85159164032
SN - 0272-8842
VL - 49
SP - 25658
EP - 25664
JO - Ceramics International
JF - Ceramics International
IS - 15
ER -