Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers

Nevin N. Naguib; Jeffrey W. Elam; James Birrell; Jian Wang; David S. Grierson; Bernd Kabius; Jon M. Hiller; Anirudha V. Sumant; Robert W. Carpick; Orlando Auciello; John A. Carlisle

doi:10.1016/j.cplett.2006.08.137

Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers

Nevin N. Naguib
, Jeffrey W. Elam
, James Birrell
, Jian Wang
, David S. Grierson
, Bernd Kabius
, Jon M. Hiller
, Anirudha V. Sumant
, Robert W. Carpick
, Orlando Auciello
, John A. Carlisle

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

Extremely smooth (6 nm RMS roughness over 4 μm²), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp³-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films' properties and enables its integration with a wide variety of substrate materials.

Original language	English (US)
Pages (from-to)	345-350
Number of pages	6
Journal	Chemical Physics Letters
Volume	430
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2006.08.137
State	Published - Oct 30 2006

All Science Journal Classification (ASJC) codes

General Physics and Astronomy
Physical and Theoretical Chemistry

Access to Document

10.1016/j.cplett.2006.08.137

Cite this

Naguib, N. N., Elam, J. W., Birrell, J., Wang, J., Grierson, D. S., Kabius, B., Hiller, J. M., Sumant, A. V., Carpick, R. W., Auciello, O., & Carlisle, J. A. (2006). Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers. Chemical Physics Letters, 430(4-6), 345-350. https://doi.org/10.1016/j.cplett.2006.08.137

@article{e96f6436180c4355ba6ba48597f05323,

title = "Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers",

abstract = "Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films' properties and enables its integration with a wide variety of substrate materials.",

author = "Naguib, \{Nevin N.\} and Elam, \{Jeffrey W.\} and James Birrell and Jian Wang and Grierson, \{David S.\} and Bernd Kabius and Hiller, \{Jon M.\} and Sumant, \{Anirudha V.\} and Carpick, \{Robert W.\} and Orlando Auciello and Carlisle, \{John A.\}",

note = "Funding Information: We gratefully acknowledge A.R. Konicek and S.D. O{\textquoteright}Connor for assistance with the NEXAFS measurements. Electron microscopy was done at the Electron Microscopy Center at Argonne National Laboratory. The micro-tip arrays were obtained from North Carolina State University (NCSU). NEXAFS measurements were conducted at the Synchrotron Radiation Center (NSF Grant DMR 0084402). UW-Madison authors acknowledge support from Air Force Office of Scientific Research, grant FA9550-05-1-0204. ANL authors acknowledge the continuous support of the US DOE Office of Science – BES Materials Science under Contract Number W-31-109-ENG-38.",

year = "2006",

month = oct,

day = "30",

doi = "10.1016/j.cplett.2006.08.137",

language = "English (US)",

volume = "430",

pages = "345--350",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

number = "4-6",

}

Naguib, NN, Elam, JW, Birrell, J, Wang, J, Grierson, DS, Kabius, B, Hiller, JM, Sumant, AV, Carpick, RW, Auciello, O & Carlisle, JA 2006, 'Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers', Chemical Physics Letters, vol. 430, no. 4-6, pp. 345-350. https://doi.org/10.1016/j.cplett.2006.08.137

TY - JOUR

T1 - Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers

AU - Naguib, Nevin N.

AU - Elam, Jeffrey W.

AU - Birrell, James

AU - Wang, Jian

AU - Grierson, David S.

AU - Kabius, Bernd

AU - Hiller, Jon M.

AU - Sumant, Anirudha V.

AU - Carpick, Robert W.

AU - Auciello, Orlando

AU - Carlisle, John A.

N1 - Funding Information: We gratefully acknowledge A.R. Konicek and S.D. O’Connor for assistance with the NEXAFS measurements. Electron microscopy was done at the Electron Microscopy Center at Argonne National Laboratory. The micro-tip arrays were obtained from North Carolina State University (NCSU). NEXAFS measurements were conducted at the Synchrotron Radiation Center (NSF Grant DMR 0084402). UW-Madison authors acknowledge support from Air Force Office of Scientific Research, grant FA9550-05-1-0204. ANL authors acknowledge the continuous support of the US DOE Office of Science – BES Materials Science under Contract Number W-31-109-ENG-38.

PY - 2006/10/30

Y1 - 2006/10/30

N2 - Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films' properties and enables its integration with a wide variety of substrate materials.

AB - Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films' properties and enables its integration with a wide variety of substrate materials.

UR - https://www.scopus.com/pages/publications/33749553569

UR - https://www.scopus.com/pages/publications/33749553569#tab=citedBy

U2 - 10.1016/j.cplett.2006.08.137

DO - 10.1016/j.cplett.2006.08.137

M3 - Article

AN - SCOPUS:33749553569

SN - 0009-2614

VL - 430

SP - 345

EP - 350

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 4-6

ER -

Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this