Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate

A. Agrawal, M. Barth, G. B. Rayner, V. T. Arun, C. Eichfeld, G. Lavallee, S. Y. Yu, X. Sang, S. Brookes, Y. Zheng, Y. J. Lee, Y. R. Lin, C. H. Wu, C. H. Ko, J. LeBeau, R. Engel-Herbert, S. E. Mohney, Y. C. Yeo, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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