Enhancement of ferroelectricity in strained BaTiO3 thin films

K. J. Choi; M. Biegalski; Y. L. Li; A. Sharan; J. Schubert; R. Uecker; P. Reiche; Y. B. Chen; X. Q. Pan; V. Gopalan; L. Q. Che; D. C. Schlom; C. B. Eom

doi:10.1126/science.1103218

Enhancement of ferroelectricity in strained BaTiO₃ thin films

K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L. Q. Che, D. C. Schlom, C. B. Eom

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1725 Scopus citations

Abstract

Biaxial compressive strain has been used to markedly enhance the ferro-electric properties of BaTiO₃ thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO₃ single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

Original language	English (US)
Pages (from-to)	1005-1009
Number of pages	5
Journal	Science
Volume	306
Issue number	5698
DOIs	https://doi.org/10.1126/science.1103218
State	Published - Nov 5 2004

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10.1126/science.1103218

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abstract = "Biaxial compressive strain has been used to markedly enhance the ferro-electric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.",

author = "Choi, {K. J.} and M. Biegalski and Li, {Y. L.} and A. Sharan and J. Schubert and R. Uecker and P. Reiche and Chen, {Y. B.} and Pan, {X. Q.} and V. Gopalan and Che, {L. Q.} and Schlom, {D. C.} and Eom, {C. B.}",

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T1 - Enhancement of ferroelectricity in strained BaTiO3 thin films

AU - Choi, K. J.

AU - Biegalski, M.

AU - Li, Y. L.

AU - Sharan, A.

AU - Schubert, J.

AU - Uecker, R.

AU - Reiche, P.

AU - Chen, Y. B.

AU - Pan, X. Q.

AU - Gopalan, V.

AU - Che, L. Q.

AU - Schlom, D. C.

AU - Eom, C. B.

PY - 2004/11/5

Y1 - 2004/11/5

N2 - Biaxial compressive strain has been used to markedly enhance the ferro-electric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

AB - Biaxial compressive strain has been used to markedly enhance the ferro-electric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

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DO - 10.1126/science.1103218

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VL - 306

SP - 1005

EP - 1009

JO - Science

JF - Science

IS - 5698

ER -

Enhancement of ferroelectricity in strained BaTiO₃ thin films

Abstract

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