Enhancement of ferroelectricity in strained BaTiO3 thin films

K. J. Choi; M. Biegalski; Y. L. Li; A. Sharan; J. Schubert; R. Uecker; P. Reiche; Y. B. Chen; X. Q. Pan; V. Gopalan; L. Q. Che; D. C. Schlom; C. B. Eom

doi:10.1126/science.1103218

Enhancement of ferroelectricity in strained BaTiO₃ thin films

K. J. Choi
, M. Biegalski
, Y. L. Li
, A. Sharan
, J. Schubert
, R. Uecker
, P. Reiche
, Y. B. Chen
, X. Q. Pan
, V. Gopalan
, L. Q. Che
, D. C. Schlom
, C. B. Eom

Research output: Contribution to journal › Article › peer-review

1836 Scopus citations

Abstract

Biaxial compressive strain has been used to markedly enhance the ferro-electric properties of BaTiO₃ thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO₃ single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

Original language	English (US)
Pages (from-to)	1005-1009
Number of pages	5
Journal	Science
Volume	306
Issue number	5698
DOIs	https://doi.org/10.1126/science.1103218
State	Published - Nov 5 2004

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10.1126/science.1103218

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title = "Enhancement of ferroelectricity in strained BaTiO3 thin films",

abstract = "Biaxial compressive strain has been used to markedly enhance the ferro-electric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250\% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.",

author = "Choi, \{K. J.\} and M. Biegalski and Li, \{Y. L.\} and A. Sharan and J. Schubert and R. Uecker and P. Reiche and Chen, \{Y. B.\} and Pan, \{X. Q.\} and V. Gopalan and Che, \{L. Q.\} and Schlom, \{D. C.\} and Eom, \{C. B.\}",

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doi = "10.1126/science.1103218",

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T1 - Enhancement of ferroelectricity in strained BaTiO3 thin films

AU - Choi, K. J.

AU - Biegalski, M.

AU - Li, Y. L.

AU - Sharan, A.

AU - Schubert, J.

AU - Uecker, R.

AU - Reiche, P.

AU - Chen, Y. B.

AU - Pan, X. Q.

AU - Gopalan, V.

AU - Che, L. Q.

AU - Schlom, D. C.

AU - Eom, C. B.

PY - 2004/11/5

Y1 - 2004/11/5

N2 - Biaxial compressive strain has been used to markedly enhance the ferro-electric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

AB - Biaxial compressive strain has been used to markedly enhance the ferro-electric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

UR - https://www.scopus.com/pages/publications/8344268623

UR - https://www.scopus.com/pages/publications/8344268623#tab=citedBy

U2 - 10.1126/science.1103218

DO - 10.1126/science.1103218

M3 - Article

AN - SCOPUS:8344268623

SN - 0036-8075

VL - 306

SP - 1005

EP - 1009

JO - Science

JF - Science

IS - 5698

ER -

Enhancement of ferroelectricity in strained BaTiO₃ thin films

Abstract

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