Enhancement of He-induced cavities in silicon by hydrogen plasma treatment

C. L. Liu; E. Ntsoenzok; A. Vengurlekar; S. Ashok; D. Alquier; M. O. Ruault; C. Dubois

doi:10.1116/1.1897710

Enhancement of He-induced cavities in silicon by hydrogen plasma treatment

C. L. Liu, E. Ntsoenzok, A. Vengurlekar, S. Ashok, D. Alquier, M. O. Ruault, C. Dubois

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Abstract

The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity formation with vacancy-type defects arising from a hydrogen plasma treatment that is interposed between the implantation (40 keV and 160 keV He) and anneal (800 °C-1 h) steps. Cross-sectional transmission electron microscopy (XTEM) results show enhanced growth of He-induced cavities due to hydrogen in the 160 keV He implanted sample, while no significant change is seen in the cavity spectrum for 40 keV. In conjunction with Secondary Ion Mass Spectroscopy (SIMS) data, the results are tentatively interpreted in terms of the evolution of defects and hydrogen during annealing, their interactions with the He-cavities, and proximity of the layers to the surface.

Original language	English (US)
Pages (from-to)	990-994
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1897710
State	Published - 2005

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Enhancement of He-induced cavities in silicon by hydrogen plasma treatment",

abstract = "The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity formation with vacancy-type defects arising from a hydrogen plasma treatment that is interposed between the implantation (40 keV and 160 keV He) and anneal (800 °C-1 h) steps. Cross-sectional transmission electron microscopy (XTEM) results show enhanced growth of He-induced cavities due to hydrogen in the 160 keV He implanted sample, while no significant change is seen in the cavity spectrum for 40 keV. In conjunction with Secondary Ion Mass Spectroscopy (SIMS) data, the results are tentatively interpreted in terms of the evolution of defects and hydrogen during annealing, their interactions with the He-cavities, and proximity of the layers to the surface.",

author = "Liu, {C. L.} and E. Ntsoenzok and A. Vengurlekar and S. Ashok and D. Alquier and Ruault, {M. O.} and C. Dubois",

note = "Funding Information: The authors from the Pennsylvania State University wish to acknowledge use of the Penn State Nanofabrication Facility, and partial support of the work by the National Renewable Energy Laboratory under subcontract No. ACQ-9-29639-04. ",

year = "2005",

doi = "10.1116/1.1897710",

language = "English (US)",

volume = "23",

pages = "990--994",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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TY - JOUR

T1 - Enhancement of He-induced cavities in silicon by hydrogen plasma treatment

AU - Liu, C. L.

AU - Ntsoenzok, E.

AU - Vengurlekar, A.

AU - Ashok, S.

AU - Alquier, D.

AU - Ruault, M. O.

AU - Dubois, C.

N1 - Funding Information: The authors from the Pennsylvania State University wish to acknowledge use of the Penn State Nanofabrication Facility, and partial support of the work by the National Renewable Energy Laboratory under subcontract No. ACQ-9-29639-04.

PY - 2005

Y1 - 2005

N2 - The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity formation with vacancy-type defects arising from a hydrogen plasma treatment that is interposed between the implantation (40 keV and 160 keV He) and anneal (800 °C-1 h) steps. Cross-sectional transmission electron microscopy (XTEM) results show enhanced growth of He-induced cavities due to hydrogen in the 160 keV He implanted sample, while no significant change is seen in the cavity spectrum for 40 keV. In conjunction with Secondary Ion Mass Spectroscopy (SIMS) data, the results are tentatively interpreted in terms of the evolution of defects and hydrogen during annealing, their interactions with the He-cavities, and proximity of the layers to the surface.

AB - The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity formation with vacancy-type defects arising from a hydrogen plasma treatment that is interposed between the implantation (40 keV and 160 keV He) and anneal (800 °C-1 h) steps. Cross-sectional transmission electron microscopy (XTEM) results show enhanced growth of He-induced cavities due to hydrogen in the 160 keV He implanted sample, while no significant change is seen in the cavity spectrum for 40 keV. In conjunction with Secondary Ion Mass Spectroscopy (SIMS) data, the results are tentatively interpreted in terms of the evolution of defects and hydrogen during annealing, their interactions with the He-cavities, and proximity of the layers to the surface.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Enhancement of He-induced cavities in silicon by hydrogen plasma treatment

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