ENHANCEMENT OF Q AND K2IN AL0.8SC0.2N/GAN/SAPPHIRE SURFACE ACOUSTIC WAVE RESONATORS USING SEMICONDUCTOR GROUND CONTACT

  • Yue Zheng
  • , Jialin Wang
  • , Mingyo Park
  • , Ping Wang
  • , Ding Wang
  • , Zetian Mi
  • , Azadeh Ansari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work reports on the super high frequency (SHF) surface acoustic wave (SAW) resonators with bottom ground contact, based on 200 nm-thick epitaxial aluminum scandium nitride (Al0.8Sc0.2N) on gallium nitride (GaN)/sapphire with high doped n-GaN as the bottom electrode. Al0.8Sc0.2N epitaxial films are grown on GaN/sapphire template with molecular beam epitaxy (MBE). Interdigital transducers with a pitch size of 0.4 μm are patterned with electron beam lithography (EBL). By taking advantage of a grounded bottom semiconductor contact and the high acoustic velocity of Sezawa modes, a four-time improvement of Q value from 172 to 819 is attained at a resonance frequency of 5.792 GHz.

Original languageEnglish (US)
Title of host publication2022 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2022
EditorsReza Ghodssi, Jenna F. Chan
PublisherTransducer Research Foundation
Pages356-359
Number of pages4
ISBN (Electronic)9781940470047
StatePublished - 2022
Event2022 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2022 - Hilton Head, United States
Duration: Jun 5 2022Jun 9 2022

Publication series

Name2022 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2022

Conference

Conference2022 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2022
Country/TerritoryUnited States
CityHilton Head
Period6/5/226/9/22

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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