@inproceedings{3f1b3ca0d9ed494a82b7b6ff060ca02f,
title = "ENHANCEMENT OF Q AND K2IN AL0.8SC0.2N/GAN/SAPPHIRE SURFACE ACOUSTIC WAVE RESONATORS USING SEMICONDUCTOR GROUND CONTACT",
abstract = "This work reports on the super high frequency (SHF) surface acoustic wave (SAW) resonators with bottom ground contact, based on 200 nm-thick epitaxial aluminum scandium nitride (Al0.8Sc0.2N) on gallium nitride (GaN)/sapphire with high doped n-GaN as the bottom electrode. Al0.8Sc0.2N epitaxial films are grown on GaN/sapphire template with molecular beam epitaxy (MBE). Interdigital transducers with a pitch size of 0.4 μm are patterned with electron beam lithography (EBL). By taking advantage of a grounded bottom semiconductor contact and the high acoustic velocity of Sezawa modes, a four-time improvement of Q value from 172 to 819 is attained at a resonance frequency of 5.792 GHz.",
author = "Yue Zheng and Jialin Wang and Mingyo Park and Ping Wang and Ding Wang and Zetian Mi and Azadeh Ansari",
note = "Publisher Copyright: {\textcopyright} 2022 TRF.; 2022 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2022 ; Conference date: 05-06-2022 Through 09-06-2022",
year = "2022",
language = "English (US)",
series = "2022 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2022",
publisher = "Transducer Research Foundation",
pages = "356--359",
editor = "Reza Ghodssi and Chan, \{Jenna F.\}",
booktitle = "2022 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2022",
}