TY - JOUR
T1 - Enhancing Efficiency and Stability of Perovskite Solar Cells through Nb-Doping of TiO2 at Low Temperature
AU - Yin, Guannan
AU - Ma, Jiaxin
AU - Jiang, Hong
AU - Li, Juan
AU - Yang, Dong
AU - Gao, Fei
AU - Zeng, Jinghui
AU - Liu, Zhike
AU - Liu, Shengzhong Frank
N1 - Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/3/29
Y1 - 2017/3/29
N2 - The conduction band energy, conductivity, mobility, and electronic trap states of electron transport layer (ETL) are very important to the efficiency and stability of a planar perovskite solar cell (PSC). However, as the most widely used ETL, TiO2 often needs to be prepared under high temperature and has unfavorable electrical properties such as low conductivity and high electronic trap states. Modifications such as elemental doping are effective methods for improving the electrical properties of TiO2 and the performance of PSCs. In this study, Nb-doped TiO2 films are prepared by a facile one-port chemical bath process at low temperature (70 °C) and applied as a high quality ETL for planar PSCs. Compared with pure TiO2, the Nb-doped TiO2 is more efficient for photogenerated electron injection and extraction, showing higher conductivity, higher mobility, and lower trap-state density. A PSC with 1% Nb-doped TiO2 yielded a power conversion efficiency of more than 19%, with about 90% of its initial efficiency remaining after storing for 1200 h in air or annealing at 80 °C for 20 h in a glovebox.
AB - The conduction band energy, conductivity, mobility, and electronic trap states of electron transport layer (ETL) are very important to the efficiency and stability of a planar perovskite solar cell (PSC). However, as the most widely used ETL, TiO2 often needs to be prepared under high temperature and has unfavorable electrical properties such as low conductivity and high electronic trap states. Modifications such as elemental doping are effective methods for improving the electrical properties of TiO2 and the performance of PSCs. In this study, Nb-doped TiO2 films are prepared by a facile one-port chemical bath process at low temperature (70 °C) and applied as a high quality ETL for planar PSCs. Compared with pure TiO2, the Nb-doped TiO2 is more efficient for photogenerated electron injection and extraction, showing higher conductivity, higher mobility, and lower trap-state density. A PSC with 1% Nb-doped TiO2 yielded a power conversion efficiency of more than 19%, with about 90% of its initial efficiency remaining after storing for 1200 h in air or annealing at 80 °C for 20 h in a glovebox.
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U2 - 10.1021/acsami.7b01063
DO - 10.1021/acsami.7b01063
M3 - Article
C2 - 28291331
AN - SCOPUS:85016466374
SN - 1944-8244
VL - 9
SP - 10752
EP - 10758
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 12
ER -