Environmental sensitivity of Au diodes on n-AlGaN

E. D. Readinger; S. E. Mohney

doi:10.1007/s11664-005-0114-5

Environmental sensitivity of Au diodes on n-AlGaN

E. D. Readinger, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Studies of the environmental aging of Schottky barriers were presented. To determine the influence of oxygen versus water vapor, Au diodes on wafer 5 were prepared using the shadow mask with an Al ohmic pad and were tested for environmental aging under controlled ambients. The annealing experiments revealed that the environmental change was partially reversible with storage in vacuum, or to a greater extent when the diodes were annealed in N₂ gas up to 250°C. It was indicated that the environmental aging phenomenon is associated interfacial defects that exist at the metal/semiconductor interface.

Original language	English (US)
Pages (from-to)	375-381
Number of pages	7
Journal	Journal of Electronic Materials
Volume	34
Issue number	4
DOIs	https://doi.org/10.1007/s11664-005-0114-5
State	Published - Apr 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-005-0114-5

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title = "Environmental sensitivity of Au diodes on n-AlGaN",

abstract = "Studies of the environmental aging of Schottky barriers were presented. To determine the influence of oxygen versus water vapor, Au diodes on wafer 5 were prepared using the shadow mask with an Al ohmic pad and were tested for environmental aging under controlled ambients. The annealing experiments revealed that the environmental change was partially reversible with storage in vacuum, or to a greater extent when the diodes were annealed in N2 gas up to 250°C. It was indicated that the environmental aging phenomenon is associated interfacial defects that exist at the metal/semiconductor interface.",

author = "Readinger, {E. D.} and Mohney, {S. E.}",

note = "Funding Information: The authors gratefully acknowledge the many materials suppliers for this work: Ed Piner and Joan Redwing while at Epitronics/ATMI Corp, Russell Dupuis while at the University of Texas, William Schaff who supplied the heterostructure from Cornell University, and Ian Ferguson while at Emcore Corporation. The authors also acknowledge the financial support of the National Science Foundation (Grant No. DMR-0308786), DARPA through AFOSR (Grant No. F496209910176), and the Pennsylvania Technology Investment Authority through the Lehigh-Penn State Center for Optical Technologies.",

year = "2005",

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doi = "10.1007/s11664-005-0114-5",

language = "English (US)",

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pages = "375--381",

journal = "Journal of Electronic Materials",

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T1 - Environmental sensitivity of Au diodes on n-AlGaN

AU - Readinger, E. D.

AU - Mohney, S. E.

N1 - Funding Information: The authors gratefully acknowledge the many materials suppliers for this work: Ed Piner and Joan Redwing while at Epitronics/ATMI Corp, Russell Dupuis while at the University of Texas, William Schaff who supplied the heterostructure from Cornell University, and Ian Ferguson while at Emcore Corporation. The authors also acknowledge the financial support of the National Science Foundation (Grant No. DMR-0308786), DARPA through AFOSR (Grant No. F496209910176), and the Pennsylvania Technology Investment Authority through the Lehigh-Penn State Center for Optical Technologies.

PY - 2005/4

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N2 - Studies of the environmental aging of Schottky barriers were presented. To determine the influence of oxygen versus water vapor, Au diodes on wafer 5 were prepared using the shadow mask with an Al ohmic pad and were tested for environmental aging under controlled ambients. The annealing experiments revealed that the environmental change was partially reversible with storage in vacuum, or to a greater extent when the diodes were annealed in N2 gas up to 250°C. It was indicated that the environmental aging phenomenon is associated interfacial defects that exist at the metal/semiconductor interface.

AB - Studies of the environmental aging of Schottky barriers were presented. To determine the influence of oxygen versus water vapor, Au diodes on wafer 5 were prepared using the shadow mask with an Al ohmic pad and were tested for environmental aging under controlled ambients. The annealing experiments revealed that the environmental change was partially reversible with storage in vacuum, or to a greater extent when the diodes were annealed in N2 gas up to 250°C. It was indicated that the environmental aging phenomenon is associated interfacial defects that exist at the metal/semiconductor interface.

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Environmental sensitivity of Au diodes on n-AlGaN

Abstract

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