Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces

M. D. Losego, L. Fitting Kourkoutis, S. Mita, H. S. Craft, D. A. Muller, R. Collazo, Z. Sitar, J. P. Maria

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16 Scopus citations


Epitaxial heterostructures incorporating the complex ferroelectric oxide Ba0.5Sr0.5TiO3 (BST) and GaN were prepared using a combination of RF magnetron sputtering and metalorganic chemical vapor deposition for the respective layers. The heterostructures were grown on c-plane sapphire substrates and were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM). This analysis showed that at substrate temperatures of 650 °C, BST films grow epitaxially on GaN with a {1 1 1} orientation and that the GaN-BST interface is smooth and abrupt, with disorder confined to grain boundaries and the interface plane. The film morphology is grainy indicating a 3-D growth mode. High-temperature post-deposition annealing studies suggest no interface reactions up to 900 °C. These results demonstrate that complex oxides like BST can be integrated with wide bandgap semiconductors like GaN and open exciting possibilities for new multifunctional devices.

Original languageEnglish (US)
Pages (from-to)1106-1109
Number of pages4
JournalJournal of Crystal Growth
Issue number4
StatePublished - Feb 1 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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